SBC847BPDW1T1G. Аналоги и основные параметры

Наименование производителя: SBC847BPDW1T1G

Маркировка: BF

Тип материала: Si

Полярность: NPN*PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.38 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 100 MHz

Ёмкость коллекторного перехода (Cc): 4.5 pf

Статический коэффициент передачи тока (hFE): 200

Корпус транзистора: SOT363

 Аналоги (замена) для SBC847BPDW1T1G

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SBC847BPDW1T1G даташит

 ..1. Size:177K  onsemi
 sbc847bpdw1t1g.pdf pdf_icon

SBC847BPDW1T1G

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

 2.1. Size:177K  onsemi
 sbc847bpdw1t3g.pdf pdf_icon

SBC847BPDW1T1G

BC846BPDW1, BC847BPDW1, BC848CPDW1 Series Dual General Purpose Transistors http //onsemi.com NPN/PNP Duals (Complementary) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is SOT-363 designed for low power surface mount applications. CASE 419B STYLE 1 Features (3) (2) (1) S Prefix for Automotive and Other Ap

 5.1. Size:110K  onsemi
 bc847bpdxv6 sbc847bpdxv6.pdf pdf_icon

SBC847BPDW1T1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

 5.2. Size:114K  onsemi
 sbc847bpdxv6t1g.pdf pdf_icon

SBC847BPDW1T1G

BC847BPDXV6, SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low http //onsemi.com power surface mount applications. Features (3) (2) (1) S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualif

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: SBC846BLT3G, SBC846BPDW1T1G, SBC846BPDW1T2G, SBC846BWT1G, SBC847AWT1G, SBC847BDW1T1G, SBC847BDW1T3G, SBC847BLT1G, 2SC1815, SBC847BPDW1T3G, SBC847BPDXV6T1G, SBC847BWT1G, SBC847CDW1T1G, SBC847CDXV6T1G, SBC847CLT1G, SBC847CWT1G, SBC847CWT3G