SBC847CDW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SBC847CDW1T1G

Código: 1G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.38 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 420

Encapsulados: SOT363

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SBC847CDW1T1G datasheet

 ..1. Size:110K  onsemi
 sbc847cdw1t1g.pdf pdf_icon

SBC847CDW1T1G

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and

 6.1. Size:128K  onsemi
 sbc847cdxv6t1g.pdf pdf_icon

SBC847CDW1T1G

 6.2. Size:200K  onsemi
 bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf pdf_icon

SBC847CDW1T1G

 7.1. Size:1432K  onsemi
 sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf pdf_icon

SBC847CDW1T1G

BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements

MOSTRAR MÁS

Otros transistores... SBC847AWT1G, SBC847BDW1T1G, SBC847BDW1T3G, SBC847BLT1G, SBC847BPDW1T1G, SBC847BPDW1T3G, SBC847BPDXV6T1G, SBC847BWT1G, 2SA1837, SBC847CDXV6T1G, SBC847CLT1G, SBC847CWT1G, SBC847CWT3G, SBC848BLT1G, SBC856ALT1G, SBC856BDW1T1G, SBC856BDW1T3G