All Transistors. SBC847CDW1T1G Datasheet

 

SBC847CDW1T1G Datasheet and Replacement


   Type Designator: SBC847CDW1T1G
   SMD Transistor Code: 1G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.38 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SOT363
 

 SBC847CDW1T1G Substitution

   - BJT ⓘ Cross-Reference Search

   

SBC847CDW1T1G Datasheet (PDF)

 ..1. Size:110K  onsemi
sbc847cdw1t1g.pdf pdf_icon

SBC847CDW1T1G

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and

 6.1. Size:128K  onsemi
sbc847cdxv6t1g.pdf pdf_icon

SBC847CDW1T1G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 6.2. Size:200K  onsemi
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf pdf_icon

SBC847CDW1T1G

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1

 7.1. Size:1432K  onsemi
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf pdf_icon

SBC847CDW1T1G

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements

Datasheet: SBC847AWT1G , SBC847BDW1T1G , SBC847BDW1T3G , SBC847BLT1G , SBC847BPDW1T1G , SBC847BPDW1T3G , SBC847BPDXV6T1G , SBC847BWT1G , BC546 , SBC847CDXV6T1G , SBC847CLT1G , SBC847CWT1G , SBC847CWT3G , SBC848BLT1G , SBC856ALT1G , SBC856BDW1T1G , SBC856BDW1T3G .

History: BLW19 | BFR92AR | STD13003 | DDTC143ZCA | 2SA499 | 2SC89 | 2SD968A

Keywords - SBC847CDW1T1G transistor datasheet

 SBC847CDW1T1G cross reference
 SBC847CDW1T1G equivalent finder
 SBC847CDW1T1G lookup
 SBC847CDW1T1G substitution
 SBC847CDW1T1G replacement

 

 
Back to Top

 


 
.