SBC847CDW1T1G Datasheet and Replacement
Type Designator: SBC847CDW1T1G
SMD Transistor Code: 1G
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.38 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 4.5 pF
Forward Current Transfer Ratio (hFE), MIN: 420
Noise Figure, dB: -
Package: SOT363
SBC847CDW1T1G Substitution
SBC847CDW1T1G Datasheet (PDF)
sbc847cdw1t1g.pdf

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and
sbc847cdxv6t1g.pdf

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements
Datasheet: SBC847AWT1G , SBC847BDW1T1G , SBC847BDW1T3G , SBC847BLT1G , SBC847BPDW1T1G , SBC847BPDW1T3G , SBC847BPDXV6T1G , SBC847BWT1G , BC546 , SBC847CDXV6T1G , SBC847CLT1G , SBC847CWT1G , SBC847CWT3G , SBC848BLT1G , SBC856ALT1G , SBC856BDW1T1G , SBC856BDW1T3G .
History: BLW19 | BFR92AR | STD13003 | DDTC143ZCA | 2SA499 | 2SC89 | 2SD968A
Keywords - SBC847CDW1T1G transistor datasheet
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History: BLW19 | BFR92AR | STD13003 | DDTC143ZCA | 2SA499 | 2SC89 | 2SD968A



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