SBC847CDXV6T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SBC847CDXV6T1G
Código: 1G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.36 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 1.5 pF
Ganancia de corriente contínua (hfe): 420
Paquete / Cubierta: SOT563
- Selección de transistores por parámetros
SBC847CDXV6T1G Datasheet (PDF)
sbc847cdxv6t1g.pdf

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1
bc847cdxv6t1g sbc847cdxv6t1g bc847cdxv6t5g bc848cdxv6t1g.pdf

BC847CDXV6T1G,SBC847CDXV6T1G,BC847CDXV6T5G,BC848CDXV6T1GDual General Purposehttp://onsemi.comTransistors(3) (2) (1)NPN DualsThese transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-563 which is designed forlow power surface mount applications.(4) (5) (6)Features AEC-Q101 Qualified and PPAP CapableBC847CDXV6T1
sbc847cdw1t1g.pdf

BC846BDW1, BC847BDW1,BC848CDW1Dual General PurposeTransistorsNPN Dualswww.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Features SOT-363CASE 419B S and NSV Prefixes for Automotive and Other ApplicationsSTYLE 1Requiring Unique Site and
sbc846alt1g sbc846blt1g sbc846blt3g sbc847clt1g sbc848blt1g.pdf

BC846ALT1G Series,SBC846ALT1G SeriesGeneral PurposeTransistorsNPN SiliconFeatureshttp://onsemi.com Moisture Sensitivity Level: 1 ESD Rating - Human Body Model: >4000 VCOLLECTORESD Rating - Machine Model: >400 V3 AEC-Q101 Qualified and PPAP Capable1 S Prefix for Automotive and Other Applications Requiring UniqueBASESite and Control Change Requirements
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: ZTX302M | NSVF4009SG4
History: ZTX302M | NSVF4009SG4



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