SBC847CDXV6T1G Specs and Replacement

Type Designator: SBC847CDXV6T1G

SMD Transistor Code: 1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 1.5 pF

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SOT563

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SBC847CDXV6T1G datasheet

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SBC847CDXV6T1G

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SBC847CDXV6T1G

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SBC847CDXV6T1G

BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors NPN Duals www.onsemi.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. Features SOT-363 CASE 419B S and NSV Prefixes for Automotive and Other Applications STYLE 1 Requiring Unique Site and ... See More ⇒

 7.1. Size:1432K  onsemi

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SBC847CDXV6T1G

BC846ALT1G Series, SBC846ALT1G Series General Purpose Transistors NPN Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model >4000 V COLLECTOR ESD Rating - Machine Model >400 V 3 AEC-Q101 Qualified and PPAP Capable 1 S Prefix for Automotive and Other Applications Requiring Unique BASE Site and Control Change Requirements ... See More ⇒

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Detailed specifications: SBC847BDW1T1G, SBC847BDW1T3G, SBC847BLT1G, SBC847BPDW1T1G, SBC847BPDW1T3G, SBC847BPDXV6T1G, SBC847BWT1G, SBC847CDW1T1G, BC546, SBC847CLT1G, SBC847CWT1G, SBC847CWT3G, SBC848BLT1G, SBC856ALT1G, SBC856BDW1T1G, SBC856BDW1T3G, SBC856BLT1G

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