SBCP56-16T3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SBCP56-16T3G
Código: BH-16
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1.5 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 130 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: SOT223
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SBCP56-16T3G datasheet
sbcp56-16t3g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
sbcp56-16t1g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
sbcp56-10t1g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
sbcp56t3g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
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