SBCP56-16T3G. Аналоги и основные параметры
Наименование производителя: SBCP56-16T3G
Маркировка: BH-16
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 1.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 130 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: SOT223
Аналоги (замена) для SBCP56-16T3G
- подборⓘ биполярного транзистора по параметрам
SBCP56-16T3G даташит
sbcp56-16t3g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
sbcp56-16t1g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
sbcp56-10t1g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
sbcp56t3g.pdf
BCP56 Series, SBCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 http //onsemi.com package, which is designed for medium power surface mount applications. MEDIUM POWER NPN SILICON Features HIGH CURRENT TRANSISTOR High Current 1.0 A SURFACE MOUNT The
Другие транзисторы: SBC857BWT1G, SBC857CDW1T1G, SBC857CLT1G, SBCP53-10T1G, SBCP53-16T1G, SBCP53T1G, SBCP56-10T1G, SBCP56-16T1G, D209L, SBCP56T1G, SBCP56T3G, SBCP68T1G, SBCW30LT1G, SBCW33LT1G, SBCW66GLT1G, SBCW72LT1G, SBCX19LT1G
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