SBN13001 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SBN13001

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 8 W

Tensión colector-base (Vcb): 600 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 9

Encapsulados: TO92

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SBN13001 datasheet

 ..1. Size:323K  winsemi
 sbn13001.pdf pdf_icon

SBN13001

SBN13001 SBN13001 SBN13001 SBN13001 High Voltage Fast-Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter T

 7.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13001

SBN13003HB High Voltage Fast Switching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter Test Conditions Value

 7.2. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13001

SBN13002D SBN13002D SBN13002D SBN13002D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol 2.Collector Very High Switching Speed High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter Built -in freewheeling diode General Description This Device is designed for high voltage, high speed switching characteristics required suc

 7.3. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13001

SBN13002D SBN13002D SBN13002D SBN13002D HighVoltageFast-SwitchingNPNPowerTransistor Features symbol symbol symbol symbol 2.Collector Very High Switching Speed High Voltage Capability 1.Base Wide Reverse Bias SOA 3.Emitter Built -in freewheeling diode General Description This Device is designed for high voltage, high speed switching characteristics required suc

MOSTRAR MÁS

Otros transistores... SBCW30LT1G, SBCW33LT1G, SBCW66GLT1G, SBCW72LT1G, SBCX19LT1G, SBF13007-O, SBF13009-O, SBF720T1G, BC639, SBN13002, SBN13002D, SBN13003A, SBN13003A1, SBN13003HB, SBR13003A, SBR13003B, SBR13003B1