All Transistors. SBN13001 Datasheet

 

SBN13001 Datasheet and Replacement


   Type Designator: SBN13001
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 8 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 9
   Noise Figure, dB: -
   Package: TO92
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SBN13001 Datasheet (PDF)

 ..1. Size:323K  winsemi
 sbn13001.pdf pdf_icon

SBN13001

SBN13001SBN13001SBN13001SBN13001High Voltage Fast-Switching NPN Power TransistorFeatures Very High Switching Speed High Voltage Capability Wide Reverse Bias SOAGeneral DescriptionThis Device is designed for high voltage, High speedswitching characteristics required such as lightingsystem, switching mode power supply.Absolute Maximum RatingsSymbol Parameter T

 7.1. Size:147K  winsemi
 sbn13003hb.pdf pdf_icon

SBN13001

SBN13003HBHigh Voltage FastSwitching NPN Power Transistor Features Very High Switching Speed High Voltage Capability Wide Reverse Bias SOA General Description This Device is designed for high voltage , High speed Switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum RatingsSymbol Parameter Test Conditions Value

 7.2. Size:273K  winsemi
 sbn13002d.pdf pdf_icon

SBN13001

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

 7.3. Size:273K  winsemi
 sbn13003a.pdf pdf_icon

SBN13001

SBN13002DSBN13002DSBN13002DSBN13002DHighVoltageFast-SwitchingNPNPowerTransistorFeaturessymbolsymbolsymbolsymbol2.Collector Very High Switching Speed High Voltage Capability1.Base Wide Reverse Bias SOA3.Emitter Built -in freewheeling diodeGeneral DescriptionThis Device is designed for high voltage, high speedswitching characteristics required suc

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Keywords - SBN13001 transistor datasheet

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