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SHN1B01FDW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SHN1B01FDW1T1G
   Código: R9
   Material: Si
   Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.38 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT26 SOT457
 

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SHN1B01FDW1T1G Datasheet (PDF)

 ..1. Size:151K  onsemi
 hn1b01fdw1t1g shn1b01fdw1t1g.pdf pdf_icon

SHN1B01FDW1T1G

HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorwww.onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: C S Prefix for Automoti

 ..2. Size:103K  onsemi
 shn1b01fdw1t1g.pdf pdf_icon

SHN1B01FDW1T1G

HN1B01FDW1T1G,SHN1B01FDW1T1GComplementary DualGeneral PurposeAmplifier Transistorhttp://onsemi.comPNP and NPN Surface MountFeaturesSC-74 High Voltage and High Current: VCEO = 50 V, IC = 200 mACASE 318F High hFE: hFE = 200X400 STYLE 3 Moisture Sensitivity Level: 1 ESD Rating(6) (5) (4) Human Body Model: 3A Machine Model: CQ1 Q2 AEC-Q101 Qu

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History: BCY54A | 2SB426A | 3DG1906 | BU941ZTFI | BLX46 | DT49-850

 

 
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