SHN1B01FDW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SHN1B01FDW1T1G

Código: R9

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.38 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT26 SOT457

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SHN1B01FDW1T1G datasheet

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 hn1b01fdw1t1g shn1b01fdw1t1g.pdf pdf_icon

SHN1B01FDW1T1G

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor www.onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C S Prefix for Automoti

 ..2. Size:103K  onsemi
 shn1b01fdw1t1g.pdf pdf_icon

SHN1B01FDW1T1G

HN1B01FDW1T1G, SHN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http //onsemi.com PNP and NPN Surface Mount Features SC-74 High Voltage and High Current VCEO = 50 V, IC = 200 mA CASE 318F High hFE hFE = 200X400 STYLE 3 Moisture Sensitivity Level 1 ESD Rating (6) (5) (4) Human Body Model 3A Machine Model C Q1 Q2 AEC-Q101 Qu

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