SBP5307DO Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SBP5307DO

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 700 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220

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SBP5307DO datasheet

 ..1. Size:129K  semiwell
 sbp5307do.pdf pdf_icon

SBP5307DO

SemiWell Semiconductor SBP5307D-O Symbol High Voltage Fast Switching NPN Power Transistor 2 Features 1 3 Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolu

 8.1. Size:130K  semiwell
 sbp5305do.pdf pdf_icon

SBP5307DO

SemiWell Semiconductor SBP5305D-O Symbol High Voltage Fast Switching NPN Power Transistor 2 Features 1 3 Very High Switching Speed Minimum lot to lot hFE Variation Wide Reverse Bias SOA General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolu

Otros transistores... SJ5438, SJT1941PPN, SJT5198NPN, SBP13009K, SBP13009O, SBP13009S, SBP5027R, SBP5305DO, BC548, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, SD1134-05, SD1135