SD1134-05 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1134-05
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 5 W
Tensión colector-base (Vcb): 36 V
Tensión colector-emisor (Vce): 16 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.75 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 175 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: M123
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SD1134-05 datasheet
sd1134-05.pdf
SD1134-05 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .175 MHz .7.5 VOLTS .COMMON EMITTER .P 0.5 W MIN. WITH 7.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1134-05 1134-5 PIN CONNECTION DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF com- 1. Collector 3. Base munications. It with sta
sd1134.pdf
SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utili
2sd1133 2sd1134.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM
Otros transistores... SBP5305DO, SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, A1015, SD1135, SD1136, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02
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