SD1134-05 Specs and Replacement
Type Designator: SD1134-05
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.75 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Package: M123
SD1134-05 Substitution
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SD1134-05 datasheet
SD1134-05 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .175 MHz .7.5 VOLTS .COMMON EMITTER .P 0.5 W MIN. WITH 7.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1134-05 1134-5 PIN CONNECTION DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF com- 1. Collector 3. Base munications. It with sta... See More ⇒
SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utili... See More ⇒
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
Detailed specifications: SBP5305DO, SBP5307DO, SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, A1015, SD1135, SD1136, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02
Keywords - SD1134-05 pdf specs
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History: 2SA1230 | 2N3508
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