SD1136 Todos los transistores

 ..1. Size:260K  hgsemi
 sd1136.pdf

HG RF POWER TRANSISTOR SD1136 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com

 0.1. Size:207K  inchange semiconductor
 2sd1136.pdf

isc Silicon NPN Power Transistor 2SD1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 9.1. Size:68K  st
 sd1135-03.pdf

SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .150 MHz .7.5 VOLTS .COMMON EMITTER .P 2.5 W MIN. WITH 11.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1135-03 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF 1. Collector 3. Base communications. It w

 9.2. Size:50K  st
 sd1134-05.pdf

SD1134-05 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .175 MHz .7.5 VOLTS .COMMON EMITTER .P 0.5 W MIN. WITH 7.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1134-05 1134-5 PIN CONNECTION DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF com- 1. Collector 3. Base munications. It with sta

 9.3. Size:52K  st
 sd1135.pdf

SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes imp

 9.4. Size:47K  st
 sd1134.pdf

SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utili

 9.5. Size:64K  njs
 sd1134-05.pdf

 9.6. Size:31K  hitachi
 2sd1137.pdf

2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 4V Coll

 9.7. Size:31K  hitachi
 2sd1138.pdf

2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 2SD1138 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to bas

 9.8. Size:42K  hitachi
 2sd1135.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.9. Size:43K  hitachi
 2sd1133 2sd1134.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.10. Size:32K  hitachi
 2sd1133 2sd1134.pdf

2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VE

 9.11. Size:51K  no
 2sd113.pdf

 9.12. Size:156K  cdil
 csb857 csb858 csd1133 34.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB857, CSB858 CSD1133, CSD1134 CSB857, 858 PNP PLASTIC POWER TRANSISTORS CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63

 9.13. Size:352K  hgsemi
 sd1135.pdf

HG RF POWER TRANSISTOR SD1135 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF com

 9.14. Size:350K  hgsemi
 sd1134.pdf

HG RF POWER TRANSISTOR SD1134 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for U

 9.15. Size:193K  inchange semiconductor
 2sd1139.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1139 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications

 9.16. Size:213K  inchange semiconductor
 2sd1133.pdf

isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI

 9.17. Size:207K  inchange semiconductor
 2sd1137.pdf

isc Silicon NPN Power Transistor 2SD1137 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB860 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RA

 9.18. Size:214K  inchange semiconductor
 2sd113.pdf

isc Silicon NPN Power Transistor 2SD113 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier, power switching applications. DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RAT

 9.19. Size:212K  inchange semiconductor
 2sd1138.pdf

isc Silicon NPN Power Transistor 2SD1138 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB861 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RA

 9.20. Size:213K  inchange semiconductor
 2sd1135.pdf

isc Silicon NPN Power Transistor 2SD1135 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 2.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB859 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI

 9.21. Size:213K  inchange semiconductor
 2sd1134.pdf

isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB858 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI