SD1136 Specs and Replacement
Type Designator: SD1136
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 37.5 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 16 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 3.4 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 470 MHz
Collector Capacitance (Cc): 23 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: M122
- BJT ⓘ Cross-Reference Search
SD1136 datasheet
..1. Size:260K hgsemi
sd1136.pdf 
HG RF POWER TRANSISTOR SD1136 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Note Above parameters , ratings , limits and conditions are subject to change. Sep. 1998 www.HGSemi.com ... See More ⇒
0.1. Size:207K inchange semiconductor
2sd1136.pdf
isc Silicon NPN Power Transistor 2SD1136 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching and TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
9.1. Size:68K st
sd1135-03.pdf
SD1135-03 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .150 MHz .7.5 VOLTS .COMMON EMITTER .P 2.5 W MIN. WITH 11.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1135-03 1135-3 PIN CONNECTION DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF 1. Collector 3. Base communications. It w... See More ⇒
9.2. Size:50K st
sd1134-05.pdf
SD1134-05 RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS .175 MHz .7.5 VOLTS .COMMON EMITTER .P 0.5 W MIN. WITH 7.0 dB GAIN = OUT .280 4LSL (M123) epoxy sealed ORDER CODE BRANDING SD1134-05 1134-5 PIN CONNECTION DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF com- 1. Collector 3. Base munications. It with sta... See More ⇒
9.3. Size:52K st
sd1135.pdf
SD1135 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes imp... See More ⇒
9.4. Size:47K st
sd1134.pdf
SD1134 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utili... See More ⇒
9.6. Size:31K hitachi
2sd1137.pdf
2SD1137 Silicon NPN Triple Diffused Application Low frequency power amplifier TV vertical deflection output complementary pair with 2SB860 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 4V Coll... See More ⇒
9.7. Size:31K hitachi
2sd1138.pdf
2SD1138 Silicon NPN Triple Diffused Application Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 2SD1138 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to bas... See More ⇒
9.8. Size:42K hitachi
2sd1135.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
9.9. Size:43K hitachi
2sd1133 2sd1134.pdf
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM... See More ⇒
9.10. Size:32K hitachi
2sd1133 2sd1134.pdf
2SD1133, 2SD1134 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB857 and 2SB858 Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1133 2SD1134 Unit Collector to base voltage VCBO 70 70 V Collector to emitter voltage VCEO 50 60 V Emitter to base voltage VE... See More ⇒
9.12. Size:156K cdil
csb857 csb858 csd1133 34.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSB857, CSB858 CSD1133, CSD1134 CSB857, 858 PNP PLASTIC POWER TRANSISTORS CSD1133, 1134 NPN PLASTIC POWER TRANSISTORS Low frequency Power Amplifier PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 ... See More ⇒
9.13. Size:352K hgsemi
sd1135.pdf
HG RF POWER TRANSISTOR SD1135 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .470 MHz .12.5 VOLTS .EFFICIENCY 60% .COMMON EMITTER .P 5.0 W MIN. WITH 8.5 dB GAIN OUT = .280 2L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1135 SD1135 PIN CONNECTION DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF com... See More ⇒
9.14. Size:350K hgsemi
sd1134.pdf
HG RF POWER TRANSISTOR SD1134 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .450 - 512 MHz .12.5 VOLTS .EFFICIENCY 55% .COMMON EMITTER .P 2.0 W MIN. WITH 10.0 dB GAIN OUT = .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1134 SD1134 PIN CONNECTION DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for U... See More ⇒
9.15. Size:193K inchange semiconductor
2sd1139.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1139 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 200V (Min) (BR)CEO Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ... See More ⇒
9.16. Size:213K inchange semiconductor
2sd1133.pdf
isc Silicon NPN Power Transistor 2SD1133 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI... See More ⇒
9.17. Size:207K inchange semiconductor
2sd1137.pdf
isc Silicon NPN Power Transistor 2SD1137 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB860 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RA... See More ⇒
9.18. Size:214K inchange semiconductor
2sd113.pdf
isc Silicon NPN Power Transistor 2SD113 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO High Power Dissipation High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifier, power switching applications. DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RAT... See More ⇒
9.19. Size:212K inchange semiconductor
2sd1138.pdf
isc Silicon NPN Power Transistor 2SD1138 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB861 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RA... See More ⇒
9.20. Size:213K inchange semiconductor
2sd1135.pdf
isc Silicon NPN Power Transistor 2SD1135 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 2.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB859 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI... See More ⇒
9.21. Size:213K inchange semiconductor
2sd1134.pdf
isc Silicon NPN Power Transistor 2SD1134 DESCRIPTION Collector Current I = 4A C Low Collector Saturation Voltage V = 1.0V(Max)@I = 2A CE(sat) C High Collector Power Dissipation Complement to Type 2SB858 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXI... See More ⇒
Detailed specifications: SF127A, SF127B, SF127C, SF127D, SF127E, SF127F, SD1134-05, SD1135, BD140, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02, SD1224-10, SD1272
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