SD1224-02 Todos los transistores

HG RF POWER TRANSISTOR SD1224-02 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN DESCRIPTION The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground

SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .30 MHz .28 VOLTS .IMD -28 dB .COMMON EMITTER .GOLD METALLIZATION .P 30 W MIN. WITH 18 dB GAIN = OUT .380 4LFL (M113) epoxy sealed ORDER CODE BRANDING SD1224-10 1224-10 PIN CONNECTION DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB com- 1. Collector 3. Base municat

HG RF POWER TRANSISTOR SD1224-10 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .30 MHz .28 VOLTS .IMD -28 dB .COMMON EMITTER .GOLD METALLIZATION .P = 30 W MIN. WITH 18 dB GAIN OUT .380 4LFL (M113) epoxy sealed ORDER CODE BRANDING SD1224-10 1224-10 PIN CONNECTION DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha

HG RF POWER TRANSISTOR SD1224 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E S The SD1224 is an epitaxial silicon NPN planar transistor designed 175 MHz primarily for 28 V FM Class C RF amplifi