SD1224-10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SD1224-10RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.28 VOLTS.IMD -28 dB.COMMON EMITTER.GOLD METALLIZATION.P 30 W MIN. WITH 18 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1224-10 1224-10PIN CONNECTIONDESCRIPTIONThe SD1224-10 is a 28 V epitaxial silicon NPNplanar transistor designed primarily for SSB com-1. Collector 3. Basemunicat

HG RF POWER TRANSISTORSD1224-10SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.28 VOLTS.IMD -28 dB.COMMON EMITTER.GOLD METALLIZATION.P = 30 W MIN. WITH 18 dB GAINOUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1224-10 1224-10PIN CONNECTIONDESCRIPTIONThe SD1224-10 is a 28 V epitaxial silicon NPNplanar transistor designed primarily for

HG RF POWER TRANSISTORSD1224-02SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAINDESCRIPTION:The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha

HG RF POWER TRANSISTORSD1224SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORD E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SThe SD1224 is an epitaxial silicon NPN planar transistor designed 175 MHz primarily for 28 V FM Class C RF amplifi