SD1224-10 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1224-10
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 65 V
Tensión colector-emisor (Vce): 36 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 4.5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 65 pF
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: M113
Búsqueda de reemplazo de transistor bipolar SD1224-10
SD1224-10 Datasheet (PDF)
sd1224-10.pdf
SD1224-10RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.28 VOLTS.IMD -28 dB.COMMON EMITTER.GOLD METALLIZATION.P 30 W MIN. WITH 18 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1224-10 1224-10PIN CONNECTIONDESCRIPTIONThe SD1224-10 is a 28 V epitaxial silicon NPNplanar transistor designed primarily for SSB com-1. Collector 3. Basemunicat
sd1224-10.pdf
HG RF POWER TRANSISTORSD1224-10SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.28 VOLTS.IMD -28 dB.COMMON EMITTER.GOLD METALLIZATION.P = 30 W MIN. WITH 18 dB GAINOUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1224-10 1224-10PIN CONNECTIONDESCRIPTIONThe SD1224-10 is a 28 V epitaxial silicon NPNplanar transistor designed primarily for
sd1224-02.pdf
HG RF POWER TRANSISTORSD1224-02SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORFeaturesFeatures 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAINDESCRIPTION:The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground
2sd1224.pdf
2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (Ta = 25C) Cha
sd1224.pdf
HG RF POWER TRANSISTORSD1224SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORD E S C R I P T I O N K E Y F E A T U R E S D E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SD E S C R I P T I O N K E Y F E A T U R E SThe SD1224 is an epitaxial silicon NPN planar transistor designed 175 MHz primarily for 28 V FM Class C RF amplifi
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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