SD1224-10 Specs and Replacement

Type Designator: SD1224-10

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 36 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 4.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 65 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: M113

 SD1224-10 Substitution

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SD1224-10 datasheet

 ..1. Size:47K  st

 sd1224-10.pdf pdf_icon

SD1224-10

SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .30 MHz .28 VOLTS .IMD -28 dB .COMMON EMITTER .GOLD METALLIZATION .P 30 W MIN. WITH 18 dB GAIN = OUT .380 4LFL (M113) epoxy sealed ORDER CODE BRANDING SD1224-10 1224-10 PIN CONNECTION DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB com- 1. Collector 3. Base municat... See More ⇒

 ..2. Size:330K  hgsemi

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SD1224-10

HG RF POWER TRANSISTOR SD1224-10 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .30 MHz .28 VOLTS .IMD -28 dB .COMMON EMITTER .GOLD METALLIZATION .P = 30 W MIN. WITH 18 dB GAIN OUT .380 4LFL (M113) epoxy sealed ORDER CODE BRANDING SD1224-10 1224-10 PIN CONNECTION DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for... See More ⇒

 7.1. Size:353K  hgsemi

 sd1224-02.pdf pdf_icon

SD1224-10

HG RF POWER TRANSISTOR SD1224-02 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Features Features 175 MHz 28 VOLTS CLASS C COMMON EMITTER EFFICIENCY 60% MIN. POUT = 40 W MIN. GP = 7.6 dB GAIN DESCRIPTION The SD1224-02 is an epitaxial silicon NPN planar transistor designed primarily for 28 V FM Class C RF amplifiers utilized in ground... See More ⇒

 8.1. Size:162K  toshiba

 2sd1224.pdf pdf_icon

SD1224-10

2SD1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (darlington) 2SD1224 Pulse Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (Ta = 25 C) Cha... See More ⇒

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Detailed specifications: SD1135, SD1136, SD1143, SD1143-01, SD1146, SD1219, SD1224, SD1224-02, A1941, SD1272, SD1272-2, SD1274, SD1274-01, SD1275, SD1275-01, SD1285, SD1405

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