SD1274
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1274
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 36
V
Tensión colector-emisor (Vce): 16
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160
MHz
Capacitancia de salida (Cc): 95
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
SOT120
SD1274
Datasheet (PDF)
..1. Size:760K st
sd1274.pdf
SD1274RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAINDESCRIPTIONThe SD1274 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1274 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to
..2. Size:361K hgsemi
sd1274.pdf
HG RF POWER TRANSISTORSD1274SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 30 W MIN. WITH 10 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1274 SD1274PIN CONNECTIONDESCRIPTIONThe SD1274 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The S
0.1. Size:80K st
sd1274-01.pdf
SD1274-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAINDESCRIPTIONThe SD1274-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1274-01 utilizes an.380 4L FL (M113)emitter ballasted die geo
0.2. Size:56K panasonic
2sd1274.pdf
Power Transistors2SD1274, 2SD1274A, 2SD1274BSilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1one screwAbsolute Maximum Ratings (TC=25C)1.3 0.2Parameter Symbol Ra
0.3. Size:107K jmnic
2sd1274 2sd1274a 2sd1274b.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI
0.4. Size:208K inchange semiconductor
2sd1274.pdf
isc Silicon NPN Power Transistor 2SD1274DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V (Min)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Colle
0.5. Size:118K inchange semiconductor
2sd1274 2sd1274a 2sd1274b.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.