Биполярный транзистор SD1274 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: SD1274
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 16 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 160 MHz
Ёмкость коллекторного перехода (Cc): 95 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: SOT120
SD1274 Datasheet (PDF)
sd1274.pdf
SD1274RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAINDESCRIPTIONThe SD1274 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1274 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to
sd1274.pdf
HG RF POWER TRANSISTORSD1274SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 30 W MIN. WITH 10 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1274 SD1274PIN CONNECTIONDESCRIPTIONThe SD1274 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The S
sd1274-01.pdf
SD1274-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 30 W MIN. WITH 10 dB GAINDESCRIPTIONThe SD1274-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1274-01 utilizes an.380 4L FL (M113)emitter ballasted die geo
2sd1274.pdf
Power Transistors2SD1274, 2SD1274A, 2SD1274BSilicon NPN triple diffusion planar typeFor power amplificationUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 High collector to base voltage VCBO High-speed switching Full-pack package which can be installed to the heat sink with 3.1 0.1one screwAbsolute Maximum Ratings (TC=25C)1.3 0.2Parameter Symbol Ra
2sd1274 2sd1274a 2sd1274b.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITI
2sd1274.pdf
isc Silicon NPN Power Transistor 2SD1274DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V (Min)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 150 VCBOV Colle
2sd1274 2sd1274a 2sd1274b.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1274 2SD1274A 2SD1274B DESCRIPTION With TO-220Fa package High VCBO High speed switching APPLICATIONS Power amplifier applicaitons PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050