SD1275-01
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1275-01
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 70
W
Tensión colector-base (Vcb): 36
V
Tensión colector-emisor (Vce): 16
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 8
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 160
MHz
Capacitancia de salida (Cc): 95
pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: M113
Búsqueda de reemplazo de transistor bipolar SD1275-01
SD1275-01
Datasheet (PDF)
..1. Size:80K st
sd1275-01.pdf
SD1275-01RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9.0 dB GAINDESCRIPTIONThe SD1275-01 is a 13.6 V Class C epitaxial sili-con NPN planar transistor designed primarily forVHF communications. The SD1275-01 utilizes an.380 4L FL (M113)emitter ballasted die ge
8.1. Size:105K st
sd1275.pdf
SD1275RF POWER BIPOLAR TRANSISTORSVHF MOBILE APPLICATIONSFEATURES SUMMARY Figure 1. Package 160 MHz 13.6 VOLTS COMMON EMITTER POUT = 40 W MIN. WITH 9 dB GAINDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The SD1275 utilizes an emitter.380 4L STUD (M135)ballasted die geometry to w
8.2. Size:62K panasonic
2sd1275.pdf
Power Transistors2SD1275, 2SD1275ASilicon NPN triple diffusion planar type DarlingtonUnit: mmFor power amplification10.0 0.2 4.2 0.2Complementary to 2SB949 and 2SB949A 5.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEHigh-speed switchingFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute
8.3. Size:123K jmnic
2sd1275 2sd1275a.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949,2SB949A High forward current transfer ratio hFE High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MA
8.4. Size:269K hgsemi
sd1275.pdf
HG RF POWER TRANSISTORSD1275SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.160 MHz.13.6 VOLTS.COMMON EMITTER.P 40 W MIN. WITH 9.0 dB GAIN=OUT.380 4L STUD (M135)epoxy sealedORDER CODE BRANDINGSD1275 SD1275PIN CONNECTIONDESCRIPTIONThe SD1275 is a 13.6 V Class C epitaxial siliconNPN planar transistor designed primarily for VHFcommunications. The
8.5. Size:126K inchange semiconductor
2sd1275 2sd1275a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220Fa) and symbol3 EmitterAbsolute maximum ratings
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.