SD1285 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SD1285RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.12.5 VOLTS.COMMON EMITTER.GOLD METALLIZATION.IMD - 30 dB.P 20 W MIN. WITH 15 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1285 SD1285PIN CONNECTIONDESCRIPTIONThe SD1285 is a 12.5 V epitaxial NPN planartransistor designed primarily for SSB communica-tions. This device utilizes emitter

HG RF POWER TRANSISTORSD1285SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.12.5 VOLTS.COMMON EMITTER.GOLD METALLIZATION.IMD - 30 dB.P 20 W MIN. WITH 15 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1285 SD1285PIN CONNECTIONDESCRIPTIONThe SD1285 is a 12.5 V epitaxial NPN planartransistor designed primarily for SSB communi

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and

SMD Type TransistorsNPN Transistors2SD12801.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat)0.42 0.10.46 0.1 Complementary to 2SB9561.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1288DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Typ)@I = 4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB965100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1289DESCRIPTIONLow Collector Saturation Voltage: V = 0.65V(Typ)@I = 5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB966100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl