All Transistors. SD1285 Datasheet

 

SD1285 Datasheet, Equivalent, Cross Reference Search


   Type Designator: SD1285
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 36 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 4.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: M113

 SD1285 Transistor Equivalent Substitute - Cross-Reference Search

   

SD1285 Datasheet (PDF)

 ..1. Size:47K  st
sd1285.pdf

SD1285 SD1285

SD1285RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.12.5 VOLTS.COMMON EMITTER.GOLD METALLIZATION.IMD - 30 dB.P 20 W MIN. WITH 15 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1285 SD1285PIN CONNECTIONDESCRIPTIONThe SD1285 is a 12.5 V epitaxial NPN planartransistor designed primarily for SSB communica-tions. This device utilizes emitter

 ..2. Size:259K  hgsemi
sd1285.pdf

SD1285 SD1285

HG RF POWER TRANSISTORSD1285SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.12.5 VOLTS.COMMON EMITTER.GOLD METALLIZATION.IMD - 30 dB.P 20 W MIN. WITH 15 dB GAIN=OUT.380 4LFL (M113)epoxy sealedORDER CODE BRANDINGSD1285 SD1285PIN CONNECTIONDESCRIPTIONThe SD1285 is a 12.5 V epitaxial NPN planartransistor designed primarily for SSB communi

 9.1. Size:225K  nec
2sd1286.pdf

SD1285 SD1285

 9.2. Size:52K  panasonic
2sd1280 e.pdf

SD1285 SD1285

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and

 9.3. Size:48K  panasonic
2sd1280.pdf

SD1285 SD1285

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and

 9.4. Size:37K  no
2sd1288.pdf

SD1285

 9.5. Size:1058K  kexin
2sd1280.pdf

SD1285 SD1285

SMD Type TransistorsNPN Transistors2SD12801.70 0.1 Features Satisfactory operation performances at high efficiency with the low-voltage power supply. Low collector to emitter saturation voltage VCE(sat)0.42 0.10.46 0.1 Complementary to 2SB9561.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

 9.6. Size:203K  inchange semiconductor
2sd1288.pdf

SD1285 SD1285

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1288DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Typ)@I = 4.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB965100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power

 9.7. Size:196K  inchange semiconductor
2sd1286-z.pdf

SD1285 SD1285

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286-ZDESCRIPTIONWith TO-252(DPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963-ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor control

 9.8. Size:203K  inchange semiconductor
2sd1289.pdf

SD1285 SD1285

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1289DESCRIPTIONLow Collector Saturation Voltage: V = 0.65V(Typ)@I = 5.0ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB966100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power

 9.9. Size:192K  inchange semiconductor
2sd1286.pdf

SD1285 SD1285

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1286DESCRIPTIONWith TO-251(IPAK) packagingVery high DC current gainMonolithic darlington transistor with integratedantiparallel collector-emitter diodeComplement to type 2SB963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlEl

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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