SD1405 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1405
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 270 W
Tensión colector-base (Vcb): 36 V
Tensión colector-emisor (Vce): 18 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: SOT121
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SD1405 datasheet
..1. Size:102K st
sd1405.pdf 
SD1405 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS 30 MHz 12.5 VOLTS COMMON EMITTER IMD 32 dB GOLD METALLIZATION POUT = 75 W MIN. WITH 13 dB GAIN M174 epoxy sealed DESCRIPTION ORDER CODE BRANDING SD1405 SD1405 The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes diffused
..2. Size:273K hgsemi
sd1405.pdf
HG RF POWER TRANSISTOR SD1405 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .30 MHz .12.5 VOLTS .COMMON EMITTER .IMD -32 dB .GOLD METALLIZATION .POUT 75 W MIN. WITH 13 dB GAIN = .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1405 SD1405 PIN CONNECTION DESCRIPTION The SD1405 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily fo
0.1. Size:187K inchange semiconductor
2sd1405.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1405 DESCRIPTION High DC Current Gain h = 200(Min) @I = 0.5A FE C Low Collector Saturation Voltage V = 1.0V(Max.)@ I = 1A CE(sat) C Collector Power Dissipation of 25W@ T =25 C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power
9.1. Size:45K st
sd1407.pdf
SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS .30 MHz .28 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .P 125 W MIN. WITH 15 dB GAIN = OUT .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1407 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communica- tions. This device utilizes state-
9.2. Size:105K toshiba
2sd1408.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
9.4. Size:131K toshiba
2sd1407a.pdf
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Col
9.7. Size:46K fairchild semi
ksd1406.pdf
KSD1406 Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement to KSB1015 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Cu
9.8. Size:49K fairchild semi
ksd1408.pdf
KSD1408 Power Amplifier Applications Complement to KSB1017 TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.4 A PC Collector
9.9. Size:1413K rohm
rsd140p06fra.pdf
Data Sheet AEC-Q101 Qualified 4V Drive Pch MOSFET RSD140P06 RSD140P06FRA Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Pack
9.10. Size:1213K rohm
rsd140p06.pdf
Data Sheet 4V Drive Pch MOSFET RSD140P06 Structure Dimensions (Unit mm) Silicon P-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner cir
9.11. Size:81K wingshing
2sd1403.pdf
Silicon Diffused Power Transistor 2SD1403 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers MT-100 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value V = 0V BE V - 1500 V CES
9.12. Size:68K wingshing
2sd1402.pdf
NPN TRIPLE DIFFUSED 2SD1402 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto
9.14. Size:71K wingshing
2sd1409.pdf
2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) I
9.15. Size:105K jmnic
2sd1409.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and sym
9.16. Size:264K hgsemi
sd1407.pdf
HG RF POWER TRANSISTOR SD1407 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR .30 MHz .28 VOLTS .IMD -30 dB .COMMON EMITTER .GOLD METALLIZATION .POUT 125 W MIN. WITH 15 dB GAIN = .500 4LFL (M174) epoxy sealed ORDER CODE BRANDING SD1407 1407 PIN CONNECTION DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communi
9.17. Size:212K inchange semiconductor
2sd1400.pdf
isc Silicon NPN Power Transistor 2SD1400 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
9.18. Size:208K inchange semiconductor
2sd1404.pdf
isc Silicon NPN Power Transistor 2SD1404 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS B/W TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.19. Size:217K inchange semiconductor
2sd1403.pdf
isc Silicon NPN Power Transistor 2SD1403 DESCRIPTION High Breakdown Voltage High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Col
9.20. Size:211K inchange semiconductor
2sd1408.pdf
isc Silicon NPN Power Transistor 2SD1408 DESCRIPTION Low Collector Saturation Voltage V = 1.5V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Complement to Type 2SB1017 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
9.21. Size:217K inchange semiconductor
2sd1402.pdf
isc Silicon NPN Power Transistor 2SD1402 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V C
9.22. Size:210K inchange semiconductor
2sd1407.pdf
isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
9.23. Size:191K inchange semiconductor
2sd1409a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1409A DESCRIPTION High collector-emitter breakdown voltage- V = 400V(Min) (BR)CEO High DC current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage swi
9.24. Size:216K inchange semiconductor
2sd1406.pdf
isc Silicon NPN Power Transistor 2SD1406 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 3A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Complement to Type 2SB1015 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier applications. ABSOLUTE MA
9.25. Size:213K inchange semiconductor
2sd1409.pdf
isc Silicon NPN Darlington Power Transistor 2SD1409 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... SD1224-10, SD1272, SD1272-2, SD1274, SD1274-01, SD1275, SD1275-01, SD1285, BC327, SD1407, SD1420, SD1422, SD1429, SD1434, SD1439, SD1446, SD1448
