SD1405 Datasheet and Replacement

SD1405RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS 30 MHz 12.5 VOLTS COMMON EMITTER IMD 32 dB GOLD METALLIZATION POUT = 75 W MIN. WITH 13 dB GAIN M174epoxy sealedDESCRIPTION ORDER CODE BRANDINGSD1405 SD1405The SD1405 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily for HFcommunications. This device utilizes diffused

HG RF POWER TRANSISTORSD1405SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.12.5 VOLTS.COMMON EMITTER.IMD -32 dB.GOLD METALLIZATION.POUT 75 W MIN. WITH 13 dB GAIN=.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1405 SD1405PIN CONNECTIONDESCRIPTIONThe SD1405 is a 12.5 V Class C epitaxial siliconNPN planar transistor designed primarily fo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1405DESCRIPTIONHigh DC Current Gain: h = 200(Min) @I = 0.5AFE CLow Collector Saturation Voltage: V = 1.0V(Max.)@ I = 1ACE(sat) CCollector Power Dissipation of 25W@ T =25CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power

SD1407RF & MICROWAVE TRANSISTORSHF SSB APPLICATIONS.30 MHz.28 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.P 125 W MIN. WITH 15 dB GAIN=OUT.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1407 1407PIN CONNECTIONDESCRIPTIONThe SD1407 is a 28 V epitaxial silicon NPN planartransistor designed primarily for SSB communica-tions. This device utilizes state-

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2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 100 V Low collector saturation voltage: VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 100 VCol

KSD1406Low Frequency Power Amplifier Low Collector-Emitter Saturation Voltage Complement to KSB1015TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 VIC Collector Cu

KSD1408Power Amplifier Applications Complement to KSB1017TO-220F11.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 VIC Collector Current 4 AIB Base Current 0.4 APC Collector

Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD140P06RSD140P06FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack

Data Sheet4V Drive Pch MOSFET RSD140P06Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir

Silicon Diffused Power Transistor2SD1403GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversMT-100QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value V = 0VBEV - 1500 VCES

NPN TRIPLE DIFFUSED2SD1402 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS (No Damper Diode) SC-65 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collecto

2SD1407 PNP EPITAXIAL SILICON TRANSISTORPOWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -3 A Collector Dissipation (Tc=25 PC 25 W

2SD1409 SILICON NPN DARLINGTON TRANSISTORGENERAL DESCRIPTIONDarington transistor are designed for use as general purpose amplifiers, switching and motor control applications.QUICK REFERENCE DATATO-220FSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 600 VCollector-emitter voltage (open base)VCEO - 400 VCollector current (DC)I

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and sym

HG RF POWER TRANSISTORSD1407SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR.30 MHz.28 VOLTS.IMD -30 dB.COMMON EMITTER.GOLD METALLIZATION.POUT 125 W MIN. WITH 15 dB GAIN=.500 4LFL (M174)epoxy sealedORDER CODE BRANDINGSD1407 1407PIN CONNECTIONDESCRIPTIONThe SD1407 is a 28 V epitaxial silicon NPN planartransistor designed primarily for SSB communi

isc Silicon NPN Power Transistor 2SD1400DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

isc Silicon NPN Power Transistor 2SD1404DESCRIPTIONHigh Collector Current CapabilityHigh Collector Power Dissipation CapabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSB/W TV horizontal deflection output applications.High voltage switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Power Transistor 2SD1403DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV Col

isc Silicon NPN Power Transistor 2SD1408DESCRIPTIONLow Collector Saturation Voltage: V = 1.5V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOComplement to Type 2SB1017Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SD1402DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV C

isc Silicon NPN Power Transistor 2SD1407DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 4ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOComplement to Type 2SB1016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor 2SD1409ADESCRIPTIONHigh collector-emitter breakdown voltage-: V = 400V(Min)(BR)CEOHigh DC current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage swi

isc Silicon NPN Power Transistor 2SD1406DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOComplement to Type 2SB1015Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier applications.ABSOLUTE MA

isc Silicon NPN Darlington Power Transistor 2SD1409DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25