SD1536-03 Todos los transistores

 ..1. Size:91K  apt
 sd1536-03.pdf

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 SD1536-03 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features Features 1025 1150 MHz 50 VOLTS POUT = 90 W GP = 8.4 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION DESCRIPTION The SD1536-03 is a gold metallized silicon NP

 8.1. Size:48K  rohm
 2sd1536m.pdf

 9.1. Size:71K  st
 sd1538.pdf

SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .200 WATTS (typ.) IFF 1030 - 1090 MHz .150 WATTS (min.) DME 1025 - 1150 MHz .140 WATTS (typ.) TACAN 960 - 1215 MHz .7.8 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 SQ. 2LFL (M103) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRA

 9.2. Size:59K  st
 sd1530-08.pdf

SD1530-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .40 WATTS (typ.) IFF 1030 - 1090 MHz .35 WATTS (min.) DME 1025 - 1150 MHz .25 WATTS (typ.) TACAN 960 - 1215 MHz .9.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .250 SQ. 2LFL (M105) .EMITTER BALLASTING AND LOW hermetically sealed THERMAL RESISTANCE FOR ORDER CODE

 9.3. Size:39K  st
 sd1530.pdf

SD1530-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .40 WATTS (typ.) IFF 1030 - 1090 MHz .35 WATTS (min.) DME 1025 - 1150 MHz .25 WATTS (typ.) TACAN 960 - 1215 MHz .9.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .280 4LSL (M115) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRANDING

 9.4. Size:71K  st
 sd1538-08.pdf

SD1538-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS .200 W (typ.) IFF 1030 - 1090 MHz .150 W(min.) DME 1025 - 1150 MHz .140 W (typ.) TACAN 960 - 1215 MHz .7.8 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 x .400 2LFL (M138) .BALLASTING AND LOW THERMAL hermetically sealed RESISTANCE FOR RELIABILITY AND ORDER

 9.5. Size:42K  st
 sd1534.pdf

SD1534-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .80 WATTS (typ.) IFF 1030 - 1090 MHz .75 WATTS (min.) DME 1025 - 1150 MHz .50 WATTS (typ.) TACAN 960 - 1215 MHz .8.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .280 4LSL (M115) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRANDING

 9.6. Size:35K  st
 sd1534-08.pdf

SD1534-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .80 WATTS (typ.) IFF 1030 - 1090 MHz .75 WATTS (min.) DME 1025 - 1150 MHz .50 WATTS (typ.) TACAN 960 - 1215 MHz .8.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .250 SQ. 2LFL (M105) .EMITTER BALLASTING AND LOW hermetically sealed THERMAL RESISTANCE FOR ORDER CODE

 9.7. Size:65K  panasonic
 2sd1535.pdf

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink wi

 9.8. Size:57K  panasonic
 2sd1538.pdf

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circ

 9.9. Size:54K  panasonic
 2sd1539.pdf

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (T

 9.10. Size:1412K  texas
 csd15380f3.pdf

 9.11. Size:13K  advanced-semi
 sd1538-8.pdf

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION A 4x .062 x 45 .040 x 45 The ASI SD1538-8 is a Common 2xB C Base Device Designed for DME IFF, F E and TACAN Pulse Applications. D G 2xR FEATURES INCLUDE H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUM DIM

 9.12. Size:211K  inchange semiconductor
 2sd1535.pdf

isc Silicon NPN Power Transistor 2SD1535 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 5

 9.13. Size:209K  inchange semiconductor
 2sd1533.pdf

isc Silicon NPN Power Transistor 2SD1533 DESCRIPTION Collector-Base Breakdown Voltage- V = 500V(Min.) (BR)CBO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 5

 9.14. Size:216K  inchange semiconductor
 2sd1530.pdf

isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli

 9.15. Size:211K  inchange semiconductor
 2sd1531.pdf

isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

 9.16. Size:201K  inchange semiconductor
 2sd1532.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1532 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @ I = 2A, V = 4V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low