SD1536-03 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1536-03 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features Features 1025 1150 MHz 50 VOLTS POUT = 90 W GP = 8.4 dB MINIMUM INPUT MATCHED COMMON BASE CONFIGURATION DESCRIPTION: DESCRIPTION:The SD1536-03 is a gold metallized silicon NP

SD1538-02RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.200 WATTS (typ.) IFF 1030 - 1090 MHz.150 WATTS (min.) DME 1025 - 1150 MHz.140 WATTS (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 SQ. 2LFL (M103).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRA

SD1530-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.40 WATTS (typ.) IFF 1030 - 1090 MHz.35 WATTS (min.) DME 1025 - 1150 MHz.25 WATTS (typ.) TACAN 960 - 1215 MHz.9.0 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.250 SQ. 2LFL (M105).EMITTER BALLASTING AND LOWhermetically sealedTHERMAL RESISTANCE FORORDER CODE

SD1530-01RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.40 WATTS (typ.) IFF 1030 - 1090 MHz.35 WATTS (min.) DME 1025 - 1150 MHz.25 WATTS (typ.) TACAN 960 - 1215 MHz.9.0 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.280 4LSL (M115).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRANDING

SD1538-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEIFF, DME, AND TACAN APPLICATIONS.200 W (typ.) IFF 1030 - 1090 MHz.150 W(min.) DME 1025 - 1150 MHz.140 W (typ.) TACAN 960 - 1215 MHz.7.8 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 x .400 2LFL (M138).BALLASTING AND LOW THERMALhermetically sealedRESISTANCE FOR RELIABILITY ANDORDER

SD1534-01RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.80 WATTS (typ.) IFF 1030 - 1090 MHz.75 WATTS (min.) DME 1025 - 1150 MHz.50 WATTS (typ.) TACAN 960 - 1215 MHz.8.0 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.280 4LSL (M115).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRANDING

SD1534-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.80 WATTS (typ.) IFF 1030 - 1090 MHz.75 WATTS (min.) DME 1025 - 1150 MHz.50 WATTS (typ.) TACAN 960 - 1215 MHz.8.0 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.250 SQ. 2LFL (M105).EMITTER BALLASTING AND LOWhermetically sealedTHERMAL RESISTANCE FORORDER CODE

Power Transistors2SD1535Silicon NPN triple diffusion planar type DarlingtonFor high power amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesExtremely satisfactory linearity of the forward current transfer 3.1 0.1ratio hFEHigh collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink wi

Power Transistors2SD1538, 2SD1538ASilicon NPN epitaxial planar typeUnit: mm8.5 0.2 3.4 0.3For low-voltage switching6.0 0.5 1.0 0.1Complementary to 2SB1070 and 2SB1070AFeatures Low collector to emitter saturation voltage VCE(sat)1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max.the printed circ

Power Transistors2SD1539, 2SD1539ASilicon NPN epitaxial planar typeFor low-voltage switchingUnit: mmComplementary to 2SB1071 and 2SB1071A10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features Low collector to emitter saturation voltage VCE(sat) High-speed switching 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maximum Ratings (T

Support &Product Order Technical Tools &CommunityFolder Now Documents SoftwareCSD15380F3ZHCSEZ4A MAY 2016REVISED JULY 2017CSD15380F3 20V N FemtoFETMOSFET1 1 CiSS COSSTA = 25C Qg QgdVDS 20 V Qg

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A4x .062 x 45 .040 x 45The ASI SD1538-8 is a Common 2xBCBase Device Designed for DME IFF, F Eand TACAN Pulse Applications. D G2xRFEATURES INCLUDE: H I J K Gold Metelization L InputMatching P N Broad Band Performance M MINIMUM MAXIMUMDIM

isc Silicon NPN Power Transistor 2SD1535DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5

isc Silicon NPN Power Transistor 2SD1533DESCRIPTIONCollector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 5

isc Silicon NPN Power Transistor 2SD1530DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOGood Linearity of hFEHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier,power switching appli

isc Silicon NPN Power Transistor 2SD1531DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOGood Linearity of hFELow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF output amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1532DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 4VFE C CEFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low