All Transistors. SD1536-03 Datasheet

 

SD1536-03 Transistor. Datasheet pdf. Equivalent

Type Designator: SD1536-03

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 292 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 65 V

Maximum Emitter-Base Voltage |Veb|: 3.5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 1150 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: SOT172

SD1536-03 Transistor Equivalent Substitute - Cross-Reference Search

SD1536-03 Datasheet (PDF)

1.1. sd1536-03.pdf Size:91K _update

SD1536-03
SD1536-03

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 SD1536-03 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features Features • 1025 – 1150 MHz • 50 VOLTS • POUT = 90 W • GP = 8.4 dB MINIMUM • INPUT MATCHED • COMMON BASE CONFIGURATION DESCRIPTION: DESCRIPTION: The SD1536-03 is a gold metallized silicon NP

4.1. 2sd1536m.pdf Size:48K _rohm

SD1536-03

5.1. sd1534.pdf Size:42K _st

SD1536-03
SD1536-03

SD1534-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .80 WATTS (typ.) IFF 1030 - 1090 MHz .75 WATTS (min.) DME 1025 - 1150 MHz .50 WATTS (typ.) TACAN 960 - 1215 MHz .8.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .280 4LSL (M115) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRANDING REL

5.2. sd1530.pdf Size:39K _st

SD1536-03
SD1536-03

SD1530-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .40 WATTS (typ.) IFF 1030 - 1090 MHz .35 WATTS (min.) DME 1025 - 1150 MHz .25 WATTS (typ.) TACAN 960 - 1215 MHz .9.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .280 4LSL (M115) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRANDING REL

5.3. sd1534-08.pdf Size:35K _st

SD1536-03
SD1536-03

SD1534-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .80 WATTS (typ.) IFF 1030 - 1090 MHz .75 WATTS (min.) DME 1025 - 1150 MHz .50 WATTS (typ.) TACAN 960 - 1215 MHz .8.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .250 SQ. 2LFL (M105) .EMITTER BALLASTING AND LOW hermetically sealed THERMAL RESISTANCE FOR ORDER CODE BR

5.4. sd1538-08.pdf Size:71K _st

SD1536-03
SD1536-03

SD1538-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSE IFF, DME, AND TACAN APPLICATIONS .200 W (typ.) IFF 1030 - 1090 MHz .150 W(min.) DME 1025 - 1150 MHz .140 W (typ.) TACAN 960 - 1215 MHz .7.8 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 x .400 2LFL (M138) .BALLASTING AND LOW THERMAL hermetically sealed RESISTANCE FOR RELIABILITY AND ORDER COD

5.5. sd1538.pdf Size:71K _st

SD1536-03
SD1536-03

SD1538-02 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .200 WATTS (typ.) IFF 1030 - 1090 MHz .150 WATTS (min.) DME 1025 - 1150 MHz .140 WATTS (typ.) TACAN 960 - 1215 MHz .7.8 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 SQ. 2LFL (M103) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRANDI

5.6. sd1530-08.pdf Size:59K _st

SD1536-03
SD1536-03

SD1530-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .40 WATTS (typ.) IFF 1030 - 1090 MHz .35 WATTS (min.) DME 1025 - 1150 MHz .25 WATTS (typ.) TACAN 960 - 1215 MHz .9.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .250 SQ. 2LFL (M105) .EMITTER BALLASTING AND LOW hermetically sealed THERMAL RESISTANCE FOR ORDER CODE BR

5.7. 2sd1538.pdf Size:57K _panasonic

SD1536-03
SD1536-03

Power Transistors 2SD1538, 2SD1538A Silicon NPN epitaxial planar type Unit: mm 8.5 0.2 3.4 0.3 For low-voltage switching 6.0 0.5 1.0 0.1 Complementary to 2SB1070 and 2SB1070A Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. High-speed switching N type package enabling direct soldering of the radiating fin to 0.8 0.1 0.5max. the printed circuit boar

5.8. 2sd1535.pdf Size:65K _panasonic

SD1536-03
SD1536-03

Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Extremely satisfactory linearity of the forward current transfer ? 3.1 0.1 ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with 1.3

5.9. 2sd1539.pdf Size:54K _panasonic

SD1536-03
SD1536-03

Power Transistors 2SD1539, 2SD1539A Silicon NPN epitaxial planar type For low-voltage switching Unit: mm Complementary to 2SB1071 and 2SB1071A 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features Low collector to emitter saturation voltage VCE(sat) High-speed switching ? 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings (TC=25?C)

5.10. sd1538-8.pdf Size:13K _advanced-semi

SD1536-03

ASI SD1538-8 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 400 2L FLG (A) DESCRIPTION: A 4x .062 x 45° .040 x 45° The ASI SD1538-8 is a Common 2xB C Base Device Designed for DME IFF, F E and TACAN Pulse Applications. D G 2xR FEATURES INCLUDE: H I J K • Gold Metelization L • InputMatching P N • Broad Band Performance M MINIMUM MAXIMUM DIM

5.11. 2sd1531.pdf Size:266K _inchange_semiconductor

SD1536-03
SD1536-03

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1531 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage APPLICATIONS ·Designed for AF output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V

5.12. 2sd1535.pdf Size:73K _inchange_semiconductor

SD1536-03
SD1536-03

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1535 DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL P

5.13. 2sd1530.pdf Size:273K _inchange_semiconductor

SD1536-03
SD1536-03

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1530 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Good Linearity of hFE ·High Speed Switching APPLICATIONS ·Designed for power amplifier,power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=2

Datasheet: SD1458 , SD1459 , SD1460 , SD1462 , SD1480 , SD1487 , SD1489 , SD1490 , 2N5401 , SD1540 , SD1726 , SD1728 , SD1729 , SD1730 , SD1733 , MPS2222AG , MPS2222ARLG .

 


SD1536-03
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