SD1540 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SD1540
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 875 W
Tensión colector-base (Vcb): 65 V
Tensión colector-emisor (Vce): 65 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 22 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1150 MHz
Ganancia de corriente contínua (hFE): 5
Encapsulados: M103
Búsqueda de reemplazo de SD1540
- Selecciónⓘ de transistores por parámetros
SD1540 datasheet
..1. Size:69K st
sd1540.pdf 
SD1540 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .350 WATTS (typ.) IFF 1030 - 1090 MHz .300 WATTS (min.) DME 1025 - 1150 MHz .2900 WATTS (typ.) TACAN 960 - 1215 MHz .6.3 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 SQ. 2LFL (M103) .EMITTER BALLASTING AND LOW epoxy sealed THERMAL RESISTANCE FOR ORDER CODE BRAND
0.1. Size:74K st
sd1540-08.pdf
SD1540-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS .350 WATTS (typ.) IFF 1030 - 1090 MHz .300 WATTS (min.) DME 1025 - 1150 MHz .290 WATTS (typ.) TACAN 960 - 1215 MHz .6.3 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .400 x .400. 2LFL (M138) .EMITTER BALLASTING AND LOW hermetically sealed THERMAL RESISTANCE FOR ORD
0.2. Size:180K inchange semiconductor
2sd1540.pdf
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD1540 DESCRIPTION High DC current gain- h = 800 (Min) @ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose power amplifier and switching
9.1. Size:57K st
sd1542-42.pdf
SD1542-42 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF .600 WATTS (min.) IFF 1030 or 1090 MHz .REFRACTORY GOLD METALLIZATION .6.0 dB MIN. GAIN .LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS .400 x .500 2LFL (M112) .30 1 LOAD VSWR CAPABILITY AT hermetically sealed SPECIFIED OPERATING CONDITIONS ORDER CODE BRANDING .INPUT MATCHED, COM
9.2. Size:56K st
sd1541.pdf
SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS .400 (min.) DME 1025 - 1150 MHz .6.5 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR .400 x .500 2LFL (M112) RELIABILITY AND RUGGEDNESS hermetically sealed .30 1 LOAD VSWR CAPABILITY AT ORDER CODE BRANDING SPECIFICIED O
9.3. Size:81K st
sd1542-04.pdf
SD1542-04 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF .600 WATTS (min.) IFF 1030/1090 MHz .REFRACTORY GOLD METALLIZATION .6.0 dB MIN. GAIN .BALLASTING AND LOW THERMAL REISTANCE FOR RELIABILITY AND .400 x .500 2LFL (M112) RUGGEDNESS hermetically sealed .30 1 LOAD VSWR CAPABILITY AT ORDER CODE BRANDING SPECIFIED OPERATING CONDITIONS SD1542-
9.4. Size:73K st
sd1542.pdf
SD1542 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS .600 WATTS (typ.) IFF 1030/1090 MHz .550 WATTS (min.) DME 1025 - 1150 MHz .5.6 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .BALLASTING AND LOW THERMAL .400 x .500 2LFL (M112) RESISTANCE FOR RELIABILITY AND hermetically sealed RUGGEDNESS ORDER CODE BRANDING .30 1 LOAD V
9.5. Size:47K st
sd1541-09.pdf
SD1541-09 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS .DESIGNED FOR HIGH POWER PULSED IFF APPLICATIONS .450 WATTS (min.) IFF 1030/1090 MHz .7.0 dB MIN. GAIN .REFRACTORY GOLD METALLIZATION .BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND .400 x .500 2LFL (M112) RUGGEDNESS hermetically sealed .30 1 LOAD VSWR CAPABILITY AT ORDER CODE BRANDING SPECIFIED OPERATING CONDI
9.8. Size:31K wingshing
2sd1546.pdf
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546 COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current
9.9. Size:69K wingshing
2sd1545.pdf
NPN TRIPLE DIFFUSED 2SD1545 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
9.10. Size:70K wingshing
2sd1547.pdf
NPN TRIPLE DIFFUSED 2SD1547 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector
9.11. Size:215K inchange semiconductor
2sd1546.pdf
isc Silicon NPN Power Transistor 2SD1546 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
9.12. Size:215K inchange semiconductor
2sd1545.pdf
isc Silicon NPN Power Transistor 2SD1545 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
9.13. Size:190K inchange semiconductor
2sd1549.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1549 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V (Min) CEO(SUS) High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM
9.14. Size:215K inchange semiconductor
2sd1544.pdf
isc Silicon NPN Power Transistor 2SD1544 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
9.15. Size:202K inchange semiconductor
2sd1542.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
9.16. Size:215K inchange semiconductor
2sd1543.pdf
isc Silicon NPN Power Transistor 2SD1543 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500
9.17. Size:215K inchange semiconductor
2sd1547.pdf
isc Silicon NPN Power Transistor 2SD1547 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
9.18. Size:210K inchange semiconductor
2sd1541.pdf
isc Silicon NPN Power Transistor 2SD1541 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
9.19. Size:215K inchange semiconductor
2sd1548.pdf
isc Silicon NPN Power Transistor 2SD1548 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal output applications. Switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
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