SD1540 Datasheet and Replacement

   Type Designator: SD1540
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 875 W
   Maximum Collector-Base Voltage |Vcb|: 65 V
   Maximum Collector-Emitter Voltage |Vce|: 65 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 22 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 1150 MHz
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: M103

SD1540 Substitution

- BJT ⓘ Cross-Reference Search

SD1540 Datasheet (PDF)

..1. Size:69K st
sd1540.pdf pdf_icon

SD1540RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.350 WATTS (typ.) IFF 1030 - 1090 MHz.300 WATTS (min.) DME 1025 - 1150 MHz.2900 WATTS (typ.) TACAN 960 - 1215 MHz.6.3 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 SQ. 2LFL (M103).EMITTER BALLASTING AND LOWepoxy sealedTHERMAL RESISTANCE FORORDER CODE BRAND

..2. Size:106K njs
sd1540.pdf pdf_icon

0.1. Size:74K st
sd1540-08.pdf pdf_icon

SD1540-08RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF, DME, TACAN APPLICATIONS.350 WATTS (typ.) IFF 1030 - 1090 MHz.300 WATTS (min.) DME 1025 - 1150 MHz.290 WATTS (typ.) TACAN 960 - 1215 MHz.6.3 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.400 x .400. 2LFL (M138).EMITTER BALLASTING AND LOWhermetically sealedTHERMAL RESISTANCE FORORD

0.2. Size:180K inchange semiconductor
2sd1540.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD1540DESCRIPTIONHigh DC current gain-h = 800 (Min) @ I = 0.5AFE CCollector-Emitter Breakdown Voltage-V = 100V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose power amplifier and switching

9.1. Size:57K st
sd1542-42.pdf pdf_icon

SD1542-42RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF.600 WATTS (min.) IFF 1030 or 1090 MHz.REFRACTORY GOLD METALLIZATION.6.0 dB MIN. GAIN.LOW THERMAL RESISTANCE FORRELIABILITY AND RUGGEDNESS.400 x .500 2LFL (M112).30:1 LOAD VSWR CAPABILITY AThermetically sealedSPECIFIED OPERATING CONDITIONSORDER CODE BRANDING.INPUT MATCHED, COM

9.2. Size:56K st
sd1541.pdf pdf_icon

SD1541-01RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF AND DME APPLICATIONS.400 (min.) DME 1025 - 1150 MHz.6.5 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.EMITTER BALLASTING AND LOWTHERMAL RESISTANCE FOR.400 x .500 2LFL (M112)RELIABILITY AND RUGGEDNESShermetically sealed.30:1 LOAD VSWR CAPABILITY ATORDER CODE BRANDINGSPECIFICIED O

9.3. Size:81K st
sd1542-04.pdf pdf_icon

SD1542-04RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF.600 WATTS (min.) IFF 1030/1090 MHz.REFRACTORY GOLD METALLIZATION.6.0 dB MIN. GAIN.BALLASTING AND LOW THERMALREISTANCE FOR RELIABILITY AND.400 x .500 2LFL (M112)RUGGEDNESShermetically sealed.30:1 LOAD VSWR CAPABILITY ATORDER CODE BRANDINGSPECIFIED OPERATING CONDITIONSSD1542-

9.4. Size:73K st
sd1542.pdf pdf_icon

SD1542RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF AND DME APPLICATIONS.600 WATTS (typ.) IFF 1030/1090 MHz.550 WATTS (min.) DME 1025 - 1150 MHz.5.6 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.BALLASTING AND LOW THERMAL.400 x .500 2LFL (M112)RESISTANCE FOR RELIABILITY ANDhermetically sealedRUGGEDNESSORDER CODE BRANDING.30:1 LOAD V

9.5. Size:47K st
sd1541-09.pdf pdf_icon

SD1541-09RF & MICROWAVE TRANSISTORSAVIONICS APPLICATIONS.DESIGNED FOR HIGH POWER PULSEDIFF APPLICATIONS.450 WATTS (min.) IFF 1030/1090 MHz.7.0 dB MIN. GAIN.REFRACTORY GOLD METALLIZATION.BALLASTING AND LOW THERMALRESISTANCE FOR RELIABILITY AND.400 x .500 2LFL (M112)RUGGEDNESShermetically sealed.30:1 LOAD VSWR CAPABILITY ATORDER CODE BRANDINGSPECIFIED OPERATING CONDI

9.6. Size:50K toshiba
2sd1548.pdf pdf_icon

9.7. Size:110K panasonic
2sd1541.pdf pdf_icon

9.8. Size:31K wingshing
2sd1546.pdf pdf_icon

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR 2SD1546COLOR TV HORIZONTAL OUTPUT APPLICATIONS(NO Damper Diode) 2-16E3A High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 600 V Emitter-Base voltage VEBO 6 V Collector Current

9.9. Size:69K wingshing
2sd1545.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1545 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

9.10. Size:70K wingshing
2sd1547.pdf pdf_icon

NPN TRIPLE DIFFUSED2SD1547 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(NO Damper Diode) High Collector-Base Voltage(VCBO=1500V) 2-16E3A High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector

9.11. Size:215K inchange semiconductor
2sd1546.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1546DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

9.12. Size:215K inchange semiconductor
2sd1545.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1545DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

9.13. Size:190K inchange semiconductor
2sd1549.pdf pdf_icon

isc Product Specificationisc Silicon NPN Power Transistor 2SD1549DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V (Min)CEO(SUS)High Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM

9.14. Size:215K inchange semiconductor
2sd1544.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1544DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

9.15. Size:202K inchange semiconductor
2sd1542.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1542DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

9.16. Size:215K inchange semiconductor
2sd1543.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1543DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500

9.17. Size:215K inchange semiconductor
2sd1547.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1547DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

9.18. Size:210K inchange semiconductor
2sd1541.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1541DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

9.19. Size:215K inchange semiconductor
2sd1548.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1548DESCRIPTIONHigh Breakdown Voltage-: V = 1400V (Min)CBOHigh Switching SpeedLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal output applications.Switching regulator output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

Datasheet: SD1459 , SD1460 , SD1462 , SD1480 , SD1487 , SD1489 , SD1490 , SD1536-03 , 2SC2625 , SD1726 , SD1728 , SD1729 , SD1730 , SD1733 , MPS2222AG , MPS2222ARLG , MPS2222ARLRAG .