MPSA18RLRAG . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA18/DLow Noise TransistorNPN SiliconMPSA18Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcEmitterBase Voltage VEBO 6.5 VdcColle

Discrete POWER & SignalTechnologiesMPSA18C TO-92BENPN General Purpose AmplifierThis device is designed for low noise, high gain, applications atcollector currents from 1 A to 50 mA. Sourced from Process07. See 2N5088 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 45 VV

MPSA18Preferred Device Low Noise TransistorNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value Unit BASECollector-Emitter Voltage VCEO 45 Vdc1EMITTERCollector-Base Voltage VCBO 45 VdcEmitter-Base Voltage VEBO 6.5 VdcCollector Current - Continuous IC 200 mAdcTO-92Total Device Dissipation @ TA = 25