MPSA18RLRAG Todos los transistores

 

MPSA18RLRAG Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPSA18RLRAG

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.63 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6.5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 500

Encapsulados: TO92

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MPSA18RLRAG datasheet

 ..1. Size:80K  onsemi
 mpsa18rlrag.pdf pdf_icon

MPSA18RLRAG

MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 45 Vdc 1 EMITTER Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 6.5 Vdc Collector Current - Continuous IC 200 mAdc TO-92 Total Device Dissipation @ TA = 25

 5.1. Size:80K  onsemi
 mpsa18rlrmg.pdf pdf_icon

MPSA18RLRAG

MPSA18 Preferred Device Low Noise Transistor NPN Silicon Features These are Pb-Free Devices* http //onsemi.com COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 45 Vdc 1 EMITTER Collector-Base Voltage VCBO 45 Vdc Emitter-Base Voltage VEBO 6.5 Vdc Collector Current - Continuous IC 200 mAdc TO-92 Total Device Dissipation @ TA = 25

 7.1. Size:278K  motorola
 mpsa18 mpsa18re.pdf pdf_icon

MPSA18RLRAG

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA18/D Low Noise Transistor NPN Silicon MPSA18 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 45 Vdc Collector Base Voltage VCBO 45 Vdc Emitter Base Voltage VEBO 6.5 Vdc Colle

 8.1. Size:293K  fairchild semi
 mpsa18.pdf pdf_icon

MPSA18RLRAG

Discrete POWER & Signal Technologies MPSA18 C TO-92 B E NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1 A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V V

MOSTRAR MÁS

Otros transistores... MPSA13G , MPSA13RLRAG , MPSA13RLRMG , MPSA13RLRPG , MPSA13ZL1G , MPSA14G , MPSA14RLRAG , MPSA14RLRPG , 2N3904 , MPSA18RLRMG , MPSA29G , MPSA29RLRPG , MPSA42-BK , MPSA42M , MPSA44-BK , MPSA44U , MPSA55G .

 

 

 

 

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