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MPSH10G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSH10G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 650 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar MPSH10G

 

MPSH10G Datasheet (PDF)

 ..1. Size:82K  onsemi
mpsh10g.pdf

MPSH10G
MPSH10G

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

 8.1. Size:78K  motorola
mpsh10 mpsh11.pdf

MPSH10G
MPSH10G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSH10/DVHF/UHF TransistorsMPSH10NPN SiliconMPSH11COLLECTOR3Motorola Preferred Devices1BASE2EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 2CollectorEmitter Voltage VCEO 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 Vd

 8.2. Size:738K  fairchild semi
mmbth10 mpsh10.pdf

MPSH10G
MPSH10G

MPSH10 MMBTH10CEC TO-92EBBSOT-23Mark: 3ENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

 8.3. Size:47K  diodes
mpsh10p.pdf

MPSH10G
MPSH10G

NPN SILICON PLANAR0P MPSH10PRF TRANSISTORISSUE 4 FEB 94 T i i T i i I TI I i i i Ii i T I E-Line i I I TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I IT DITI II V V I I V I II i V V I I V I i V V I I

 8.4. Size:22K  diodes
mpsh10.pdf

MPSH10G

NPN SILICON PLANARMPSH10RF TRANSISTORISSUE 3 NOVEMBER 94 T i T i i i T TO92ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i

 8.5. Size:82K  onsemi
mpsh10rlrpg.pdf

MPSH10G
MPSH10G

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

 8.6. Size:82K  onsemi
mpsh10.pdf

MPSH10G
MPSH10G

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

 8.7. Size:130K  utc
mpsh10.pdf

MPSH10G
MPSH10G

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B TO-92 E B

 8.8. Size:261K  cdil
mpsh10.pdf

MPSH10G
MPSH10G

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10TO-92Plastic PackageCEBVHF/UHF TransistorABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 3.0 VP

 8.9. Size:357K  jiangsu
mpsh10.pdf

MPSH10G
MPSH10G

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1.BASE General Purpose Amplifier2 EMITTER 3.COLLECTOR In Low Noise UHF/VHF Amplifiers In Low Frequency Drift, High Output UHF Oscillators Equivalent Circuit MPS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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