MPSH10G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSH10/DVHF/UHF TransistorsMPSH10NPN SiliconMPSH11COLLECTOR3Motorola Preferred Devices1BASE2EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 2CollectorEmitter Voltage VCEO 25 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 3.0 Vd

MPSH10 MMBTH10CEC TO-92EBBSOT-23Mark: 3ENPN RF TransistorThis device is designed for use in low noise UHF/VHF amplifiers,with collector currents in the 100 A to 20 mA range in commonemitter or common base mode of operations, and in low frequencydrift, high output UHF oscillators. Sourced from Process 42.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

NPN SILICON PLANAR0P MPSH10PRF TRANSISTORISSUE 4 FEB 94 T i i T i i I TI I i i i Ii i T I E-Line i I I TO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I IT DITI II V V I I V I II i V V I I V I i V V I I

NPN SILICON PLANARMPSH10RF TRANSISTORISSUE 3 NOVEMBER 94 T i T i i i T TO92ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

MPSH10Preferred Device VHF/UHF TransistorsNPN SiliconFeatures Pb-Free Packages are Available* http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1Collector-Emitter Voltage VCEO 25 VdcBASECollector-Base Voltage VCBO 30 VdcEmitter-Base Voltage VEBO 3.0 Vdc2EMITTERTotal Device Dissipation @ TA = 25C PD 350 WDerate above 25C 2.8 mW/CTota

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B TO-92 E B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10TO-92Plastic PackageCEBVHF/UHF TransistorABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 25 VVCBOCollector Base Voltage 30 VVEBOEmitter Base Voltage 3.0 VP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1.BASE General Purpose Amplifier2 EMITTER 3.COLLECTOR In Low Noise UHF/VHF Amplifiers In Low Frequency Drift, High Output UHF Oscillators Equivalent Circuit MPS