MPSH10G - описание и поиск аналогов

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSH10/D VHF/UHF Transistors MPSH10 NPN Silicon MPSH11 COLLECTOR 3 Motorola Preferred Devices 1 BASE 2 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 2 Collector Emitter Voltage VCEO 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vd

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

NPN SILICON PLANAR 0P MPSH10P RF TRANSISTOR ISSUE 4 FEB 94 T i i T i i I TI I i i i Ii i T I E-Line i I I TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C) T I IT DITI II V V I I V I II i V V I I V I i V V I I

NPN SILICON PLANAR MPSH10 RF TRANSISTOR ISSUE 3 NOVEMBER 94 T i T i i i T TO92 ABSOLUTE MAXIMUM RATINGS. T V IT II i V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C) T I T IT DITI II V V I I V I II i V V I I V I i V V I I V I II I V V I i I V V I II i V V I I i

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota

MPSH10 Preferred Device VHF/UHF Transistors NPN Silicon Features Pb-Free Packages are Available* http //onsemi.com COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 25 Vdc BASE Collector-Base Voltage VCBO 30 Vdc Emitter-Base Voltage VEBO 3.0 Vdc 2 EMITTER Total Device Dissipation @ TA = 25 C PD 350 W Derate above 25 C 2.8 mW/ C Tota

UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B TO-92 E B

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR MPSH10 TO-92 Plastic Package C E B VHF/UHF Transistor ABSOLUTE MAXIMUM RATINGS(Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 25 V VCBO Collector Base Voltage 30 V VEBO Emitter Base Voltage 3.0 V P

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) 1.BASE General Purpose Amplifier 2 EMITTER 3.COLLECTOR In Low Noise UHF/VHF Amplifiers In Low Frequency Drift, High Output UHF Oscillators Equivalent Circuit MPS