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MRF10005 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF10005
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 25 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 55 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 1.25 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1215 MHz
   Capacitancia de salida (Cc): 7 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: 336E-02
 

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MRF10005 Datasheet (PDF)

 ..1. Size:100K  motorola
mrf10005.pdf pdf_icon

MRF10005

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10005/DThe RF LineMicrowave Power TransistorMRF10005. . . designed for CW and long pulsed common base amplifier applications,such as JTIDS and Mode S, in the 0.96 to 1.215 GHz frequency range at highoverall duty cycles. Guaranteed Performance @ 1.215 GHz, 28 VdcOutput Power = 5.0 Watts CWMinimum Gain = 8.5 d

 ..2. Size:193K  macom
mrf10005.pdf pdf_icon

MRF10005

MRF10005 Microwave Power Silicon Bipolar Transistor M/A-COM Products Released - Rev. 053007 5.0 W, 9601215 MHz, 28V Features Product Image Guaranteed performance @1.215GHz, 28Vdc Output power: 5.0W CW Minimum gain = 8.5dB, 10.3dB (Typ.) RF performance curves for 28 Vdc and 36 Vdc opera-tion 100% tested for load mismatch at all phase angles with 10:

 7.1. Size:108K  motorola
mrf1000m.pdf pdf_icon

MRF10005

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96

 7.2. Size:108K  motorola
mrf1000ma mrf1000mb.pdf pdf_icon

MRF10005

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1000MA/DThe RF LineMicrowave PulseMRF1000MAPower TransistorsMRF1000MB. . . designed for Class A and AB common emitter amplifier applications in thelowpower stages of IFF, DME, TACAN, radar transmitters, and CW systems. Guaranteed Performance @ 1090 MHz, 18 Vdc Class AOutput Power = 0.2 Watt0.7 W, 96

Otros transistores... MPSW51ARLRPG , MPSW51G , MQ2484HXV , MQ3251AHXV , MQ3468HXV , MQ6002HXV , MQ7003 , MQ918HXV , 9014 , MRF1000MB , MRF1001A , MRF1002MA , MRF1002MB , MRF10031 , MRF1004MA , MRF1004MB , MRF10120 .

History: CSD1506N | NSS60200L | DTD523YE | 2SD1288 | 2SB1039 | 2SB103 | BCW93KA

 

 
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