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MRF1004MB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF1004MB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 7 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 3.5 V
   Corriente del colector DC máxima (Ic): 0.25 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1250 MHz
   Capacitancia de salida (Cc): 3.3 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: 332A-03
 

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MRF1004MB Datasheet (PDF)

 ..1. Size:164K  macom
 mrf1004mb.pdf pdf_icon

MRF1004MB

MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 9601215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo

 6.1. Size:97K  motorola
 mrf1004m.pdf pdf_icon

MRF1004MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV

 6.2. Size:97K  motorola
 mrf1004ma.pdf pdf_icon

MRF1004MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV

 6.3. Size:241K  hgsemi
 mrf1004ma.pdf pdf_icon

MRF1004MB

HG RF POWER TRANSISTORMRF1004MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization SystemMAXIMUM RATINGS IC 250 mA VCE

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 3CG111

 

 
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