MRF1004MB Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF1004MB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1250 MHz
Collector Capacitance (Cc): 3.3 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: 332A-03
MRF1004MB Transistor Equivalent Substitute - Cross-Reference Search
MRF1004MB Datasheet (PDF)
mrf1004mb.pdf
MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 9601215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo
mrf1004m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV
mrf1004ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV
mrf1004ma.pdf
HG RF POWER TRANSISTORMRF1004MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization SystemMAXIMUM RATINGS IC 250 mA VCE
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
