All Transistors. MRF1004MB Datasheet

 

MRF1004MB Datasheet and Replacement


   Type Designator: MRF1004MB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 7 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3.5 V
   Maximum Collector Current |Ic max|: 0.25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1250 MHz
   Collector Capacitance (Cc): 3.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: 332A-03
 

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MRF1004MB Datasheet (PDF)

 ..1. Size:164K  macom
 mrf1004mb.pdf pdf_icon

MRF1004MB

MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 9601215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo

 6.1. Size:97K  motorola
 mrf1004m.pdf pdf_icon

MRF1004MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV

 6.2. Size:97K  motorola
 mrf1004ma.pdf pdf_icon

MRF1004MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1004MA/DThe RF LineMicrowave PulseMRF1004MAPower TransistorsDesigned for Class B and C common base amplifier applications in short andlong pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 VdcOutput Power = 4.0 Watts Peak4.0 W, 9601215 MHzMinimum Gain = 10 dBMICROWAV

 6.3. Size:241K  hgsemi
 mrf1004ma.pdf pdf_icon

MRF1004MB

HG RF POWER TRANSISTORMRF1004MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDESCRIPTION: PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization SystemMAXIMUM RATINGS IC 250 mA VCE

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Datasheet: MQ918HXV , MRF10005 , MRF1000MB , MRF1001A , MRF1002MA , MRF1002MB , MRF10031 , MRF1004MA , D209L , MRF10120 , MRF10150 , MRF1015MA , MRF1015MB , MRF10350 , MRF10502 , MRF1090MA , MRF1090MB .

History: MRF2010 | 2N5478 | MRF10005 | RCP700A | MRF1002MA | SK3011 | 40611S

Keywords - MRF1004MB transistor datasheet

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