MRF1004MB Datasheet. Specs and Replacement
Type Designator: MRF1004MB 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.25 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1250 MHz
Collector Capacitance (Cc): 3.3 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: 332A-03
MRF1004MB Substitution
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MRF1004MB datasheet
MRF1004MB Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 4.0W (peak), 960 1215MHz Product Image Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed performance @ 1090 MHz, 35 Vdc Output power = 4.0 W Peak Minimum gain = 10 dB 100% Tested fo... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1004MA/D The RF Line Microwave Pulse MRF1004MA Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak 4.0 W, 960 1215 MHz Minimum Gain = 10 dB MICROWAV... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1004MA/D The RF Line Microwave Pulse MRF1004MA Power Transistors Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak 4.0 W, 960 1215 MHz Minimum Gain = 10 dB MICROWAV... See More ⇒
HG RF POWER TRANSISTOR MRF1004MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR DESCRIPTION PACKAGE STYLE .280 4L STUD The HG MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES Class B and C Operation Common Base PG = 10 dB at 4.0 W/1090 MHz Omnigold Metalization System MAXIMUM RATINGS IC 250 mA VCE... See More ⇒
Detailed specifications: MQ918HXV, MRF10005, MRF1000MB, MRF1001A, MRF1002MA, MRF1002MB, MRF10031, MRF1004MA, 8550, MRF10120, MRF10150, MRF1015MA, MRF1015MB, MRF10350, MRF10502, MRF1090MA, MRF1090MB
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History: MRF1015MA | 2SD919
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