MRF10120 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10120/DThe RF LineMicrowave Long PulseMRF10120Power TransistorDesigned for 9601215 MHz long pulse common base amplifier applicationssuch as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 VdcOutput Power = 120 Watts Peak120 W (PEAK), 9601215 MHzGain = 8.0 dB Min., 9.2 dB (Typ)

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 9601215MHz Product Image Designed for 9601215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF10150/DThe RF LineMicrowave PulseMRF10150Power Transistor. . . designed for 10251150 MHz pulse common base amplifier applicationssuch as TCAS, TACAN and ModeS transmitters. Guaranteed Performance @ 1090 MHzOutput Power = 150 Watts Peak150 W (PEAK)Gain = 9.5 dB Min, 10.0 dB (Typ)10251150 MHzMIC

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 10251150MHz Product Image Designed for 10251150 MHz pulse common base amplifier applications such as TCAS, TACAN and ModeS transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa

HG RF POWER TRANSISTORMRF1015MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

MRF1015MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 960 1215 MHzMinimum Gain = 10 dBMICROWAVE POWER 100% Tested for Load Mismatch at All