MRF10120 datasheet и подбор замены

 ..1. Size:98K  motorola
 mrf10120.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10120/D The RF Line Microwave Long Pulse MRF10120 Power Transistor Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak 120 W (PEAK), 960 1215 MHz Gain = 8.0 dB Min., 9.2 dB (Typ)

 ..2. Size:166K  macom
 mrf10120.pdf 

MRF10120 Microwave Long Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 120W (peak), 960 1215MHz Product Image Designed for 960 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. Guaranteed performance @ 1.215 GHz, 36 Vdc Output power = 120 W Peak Gain = 7.6 dB min., 8 .5 dB (typ.) 100% test

 8.1. Size:110K  motorola
 mrf1015m.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum

 8.2. Size:110K  motorola
 mrf1015ma mrf1015mb.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1015MA/D The RF Line Microwave Pulse MRF1015MA Power Transistors MRF1015MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum

 8.3. Size:90K  motorola
 mrf10150.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF10150/D The RF Line Microwave Pulse MRF10150 Power Transistor . . . designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak 150 W (PEAK) Gain = 9.5 dB Min, 10.0 dB (Typ) 1025 1150 MHz MIC

 8.4. Size:181K  macom
 mrf10150.pdf 

MRF10150 Microwave Pulse Power Silicon NPN Transistor M/A-COM Products Released - Rev. 07.07 150W (peak), 1025 1150MHz Product Image Designed for 1025 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode S transmitters. Guaranteed performance @ 1090 MHz Output power = 150 W Peak Gain = 9.5 dB min, 10.0 dB (typ.) 100% tested for loa

 8.5. Size:238K  hgsemi
 mrf1015mb.pdf 

HG RF POWER TRANSISTOR MRF1015MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak Minimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1

 8.6. Size:341K  hgsemi
 mrf1015ma.pdf 

MRF1015MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 15 Watts Peak 15 W (PEAK), 960 1215 MHz Minimum Gain = 10 dB MICROWAVE POWER 100% Tested for Load Mismatch at All