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MRF1015MA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF1015MA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 17.5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1215 MHz
   Capacitancia de salida (Cc): 5 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: 332-04
 

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MRF1015MA Datasheet (PDF)

 ..1. Size:110K  motorola
mrf1015ma mrf1015mb.pdf pdf_icon

MRF1015MA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

 ..2. Size:341K  hgsemi
mrf1015ma.pdf pdf_icon

MRF1015MA

MRF1015MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 960 1215 MHzMinimum Gain = 10 dBMICROWAVE POWER 100% Tested for Load Mismatch at All

 6.1. Size:110K  motorola
mrf1015m.pdf pdf_icon

MRF1015MA

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1015MA/DThe RF LineMicrowave PulseMRF1015MAPower TransistorsMRF1015MB. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts Peak15 W (PEAK), 9601215 MHzMinimum

 6.2. Size:238K  hgsemi
mrf1015mb.pdf pdf_icon

MRF1015MA

HG RF POWER TRANSISTORMRF1015MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for Class B and C common base amplifier applications in shortand long pulse TACAN, IFF, DME, and radar transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 15 Watts PeakMinimum Gain = 10 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1

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