MRF1090MA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1090MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 290 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: 332-04
Búsqueda de reemplazo de transistor bipolar MRF1090MA
MRF1090MA Datasheet (PDF)
mrf1090ma mrf1090mb.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE
mrf1090ma.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE POWER
mrf1090ma.pdf
HG RF POWER TRANSISTOR MRF1090MA Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak Minimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry Sta
mrf1090marev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1090MA/D The RF Line Microwave Pulse MRF1090MA Power Transistors MRF1090MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 90 Watts Peak 90 W PEAK, 960 1215 MHz Minimum Gain = 8.4 dB MICROWAVE
Otros transistores... MRF1004MA , MRF1004MB , MRF10120 , MRF10150 , MRF1015MA , MRF1015MB , MRF10350 , MRF10502 , S9013 , MRF1090MB , MRF1150MA , MRF1150MB , MRF16006 , MRF1946 , MRF1946A , MRF235 , MRF240 .
History: NB211XG | BFX44 | MT200 | 2SC2954 | AC191-5 | 2SD198P | DDTB142JU
History: NB211XG | BFX44 | MT200 | 2SC2954 | AC191-5 | 2SD198P | DDTB142JU
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