MRF1090MA
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1090MA
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 290
W
Tensión colector-base (Vcb): 70
V
Tensión colector-emisor (Vce): 70
V
Tensión emisor-base (Veb): 4
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1100
MHz
Capacitancia de salida (Cc): 12
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: 332-04
Búsqueda de reemplazo de transistor bipolar MRF1090MA
MRF1090MA
Datasheet (PDF)
..1. Size:104K motorola
mrf1090ma mrf1090mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE
..2. Size:106K motorola
mrf1090ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER
..3. Size:255K hgsemi
mrf1090ma.pdf
HG RF POWER TRANSISTORMRF1090MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta
0.1. Size:104K motorola
mrf1090marev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE
6.1. Size:106K motorola
mrf1090m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER
6.2. Size:180K hgsemi
mrf1090mb.pdf
HG RF POWER TRANSISTORMRF1090MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta
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