Биполярный транзистор MRF1090MA - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF1090MA
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 290 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 70 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1100 MHz
Ёмкость коллекторного перехода (Cc): 12 pf
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: 332-04
Аналоги (замена) для MRF1090MA
MRF1090MA Datasheet (PDF)
mrf1090ma mrf1090mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE
mrf1090ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER
mrf1090ma.pdf
HG RF POWER TRANSISTORMRF1090MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta
mrf1090marev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE
mrf1090m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER
mrf1090mb.pdf
HG RF POWER TRANSISTORMRF1090MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
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