MRF1090MB . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1090MB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 290 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1215 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: 332A-03
Búsqueda de reemplazo de MRF1090MB
MRF1090MB Datasheet (PDF)
mrf1090ma mrf1090mb.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE
mrf1090mb.pdf

HG RF POWER TRANSISTORMRF1090MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts PeakMinimum Gain = 8.4 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry Sta
mrf1090m.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE POWER
mrf1090marev8.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1090MA/DThe RF LineMicrowave PulseMRF1090MAPower TransistorsMRF1090MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 90 Watts Peak90 W PEAK, 9601215 MHzMinimum Gain = 8.4 dBMICROWAVE
Otros transistores... MRF1004MB , MRF10120 , MRF10150 , MRF1015MA , MRF1015MB , MRF10350 , MRF10502 , MRF1090MA , 8550 , MRF1150MA , MRF1150MB , MRF16006 , MRF1946 , MRF1946A , MRF235 , MRF240 , MRF247 .
History: 2N5758 | 2SB1160 | KRA525T | 2SB1245 | MJW21192 | PN930 | 2N5288
History: 2N5758 | 2SB1160 | KRA525T | 2SB1245 | MJW21192 | PN930 | 2N5288



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
d667 transistor datasheet | hy1d datasheet | mp20a transistor | mrf450 | oc70 transistor | p0603bd mosfet | p157r5nt | ptp03n04n