MRF1150MB Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1150MB
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 583 W
Tensión colector-base (Vcb): 70 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1215 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: 332A-03
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MRF1150MB datasheet
mrf1150ma mrf1150mb.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA
mrf1150mb.pdf
HG RF POWER TRANSISTOR MRF1150MB Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10 1 VSWR Industry St
mrf1150marev8.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1150MA/D The RF Line Microwave Pulse MRF1150MA Power Transistors MRF1150MB Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak 150 W PEAK, 960 1215 MHz Minimum Gain = 7.8 dB MICROWA
Otros transistores... MRF10150 , MRF1015MA , MRF1015MB , MRF10350 , MRF10502 , MRF1090MA , MRF1090MB , MRF1150MA , 13005 , MRF16006 , MRF1946 , MRF1946A , MRF235 , MRF240 , MRF247 , MRF260 , MRF261 .
History: BC526 | BC517S
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