All Transistors. MRF1150MB Datasheet

 

MRF1150MB Datasheet and Replacement


   Type Designator: MRF1150MB
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 583 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1215 MHz
   Collector Capacitance (Cc): 25 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: 332A-03
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MRF1150MB Datasheet (PDF)

 ..1. Size:128K  motorola
 mrf1150ma mrf1150mb.pdf pdf_icon

MRF1150MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA

 ..2. Size:250K  hgsemi
 mrf1150mb.pdf pdf_icon

MRF1150MB

HG RF POWER TRANSISTORMRF1150MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St

 6.1. Size:128K  motorola
 mrf1150marev8.pdf pdf_icon

MRF1150MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA

 6.2. Size:104K  motorola
 mrf1150m.pdf pdf_icon

MRF1150MB

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER

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Keywords - MRF1150MB transistor datasheet

 MRF1150MB cross reference
 MRF1150MB equivalent finder
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