MRF1150MB Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF1150MB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 583 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 1215 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: 332A-03
MRF1150MB Transistor Equivalent Substitute - Cross-Reference Search
MRF1150MB Datasheet (PDF)
mrf1150ma mrf1150mb.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
mrf1150mb.pdf
HG RF POWER TRANSISTORMRF1150MBSemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St
mrf1150marev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsMRF1150MBDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWA
mrf1150m.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
mrf1150ma.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1150MA/DThe RF LineMicrowave PulseMRF1150MAPower TransistorsDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts Peak150 W PEAK, 9601215 MHzMinimum Gain = 7.8 dBMICROWAVE POWER
mrf1150ma.pdf
HG RF POWER TRANSISTORMRF1150MASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORDesigned for Class B and C common base amplifier applications in shortpulse TACAN, IFF, and DME transmitters. Guaranteed Performance @ 1090 MHz, 50 VdcOutput Power = 150 Watts PeakMinimum Gain = 7.8 dB 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR Industry St
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
