MRF1946 Todos los transistores

 

MRF1946 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MRF1946
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 100 W
   Tensión colector-base (Vcb): 36 V
   Tensión colector-emisor (Vce): 16 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 75 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: 211-07
 

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MRF1946 Datasheet (PDF)

 ..1. Size:141K  motorola
 mrf1946 mrf1946a.pdf pdf_icon

MRF1946

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB

 ..2. Size:242K  hgsemi
 mrf1946.pdf pdf_icon

MRF1946

HG RF POWER TRANSISTORMRF1946SemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor Ba

 0.1. Size:141K  motorola
 mrf1946r.pdf pdf_icon

MRF1946

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1946/DThe RF LineNPN SiliconMRF1946Power TransistorsMRF1946A. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance30 W, 136220 MHzOutput Power = 30 WattsRF POWERPower Gain = 10 dB

 0.2. Size:243K  hgsemi
 mrf1946a.pdf pdf_icon

MRF1946

HG RF POWER TRANSISTORMRF1946ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR. . . designed for 12.5 volt largesignal power amplifiers in commercial andindustrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz PerformanceOutput Power = 30 WattsPower Gain = 10 dBEfficiency = 60%CASE 21107, STYLE 1 Diffused Emitter Resistor B

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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