MRF1946 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF1946
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 36 V
Tensión colector-emisor (Vce): 16 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Capacitancia de salida (Cc): 75 pF
Ganancia de corriente contínua (hFE): 40
Encapsulados: 211-07
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MRF1946 datasheet
mrf1946 mrf1946a.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line NPN Silicon MRF1946 Power Transistors MRF1946A . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance 30 W, 136 220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB
mrf1946.pdf
HG RF POWER TRANSISTOR MRF1946 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% CASE 211 07, STYLE 1 Diffused Emitter Resistor Ba
mrf1946r.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line NPN Silicon MRF1946 Power Transistors MRF1946A . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance 30 W, 136 220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB
mrf1946a.pdf
HG RF POWER TRANSISTOR MRF1946A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% CASE 211 07, STYLE 1 Diffused Emitter Resistor B
Otros transistores... MRF1015MB , MRF10350 , MRF10502 , MRF1090MA , MRF1090MB , MRF1150MA , MRF1150MB , MRF16006 , 2N4401 , MRF1946A , MRF235 , MRF240 , MRF247 , MRF260 , MRF261 , MRF2628 , MRF264 .
History: 2STR2215
History: 2STR2215
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