MRF1946 Datasheet. Specs and Replacement

Type Designator: MRF1946  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 36 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Collector Capacitance (Cc): 75 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: 211-07

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MRF1946 datasheet

 ..1. Size:141K  motorola

 mrf1946 mrf1946a.pdf pdf_icon

MRF1946

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line NPN Silicon MRF1946 Power Transistors MRF1946A . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance 30 W, 136 220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB ... See More ⇒

 ..2. Size:242K  hgsemi

 mrf1946.pdf pdf_icon

MRF1946

HG RF POWER TRANSISTOR MRF1946 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% CASE 211 07, STYLE 1 Diffused Emitter Resistor Ba... See More ⇒

 0.1. Size:141K  motorola

 mrf1946r.pdf pdf_icon

MRF1946

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1946/D The RF Line NPN Silicon MRF1946 Power Transistors MRF1946A . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance 30 W, 136 220 MHz Output Power = 30 Watts RF POWER Power Gain = 10 dB ... See More ⇒

 0.2. Size:243K  hgsemi

 mrf1946a.pdf pdf_icon

MRF1946

HG RF POWER TRANSISTOR MRF1946A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed for 12.5 volt large signal power amplifiers in commercial and industrial equipment. High Common Emitter Power Gain Specified 12.5 V, 175 MHz Performance Output Power = 30 Watts Power Gain = 10 dB Efficiency = 60% CASE 211 07, STYLE 1 Diffused Emitter Resistor B... See More ⇒

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Detailed specifications: MRF1015MB, MRF10350, MRF10502, MRF1090MA, MRF1090MB, MRF1150MA, MRF1150MB, MRF16006, 2N4401, MRF1946A, MRF235, MRF240, MRF247, MRF260, MRF261, MRF2628, MRF264

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