MRF429 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF429 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 233 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 220 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: SOT121
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MRF429 datasheet
..1. Size:141K motorola
mrf429.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain
..2. Size:26K eleflow
mrf429.pdf
ELEFLOW TECHNOLOGIES MRF429 www.eleflow.com NPN Silicon RF power transistor MRF429 Description MRF429 is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M
0.1. Size:141K motorola
mrf429re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain
9.1. Size:102K motorola
mrf421rev1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo
9.2. Size:97K motorola
mrf422.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermod
9.3. Size:112K motorola
mrf426re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR
9.4. Size:112K motorola
mrf426.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR
9.5. Size:99K motorola
mrf421re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo
9.6. Size:97K motorola
mrf422re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermod
9.7. Size:99K motorola
mrf421.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo
9.8. Size:230K macom
mrf422.pdf
MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a high power linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)
9.9. Size:267K macom
mrf426.pdf
MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2
9.10. Size:73K eleflow
mrf427a.pdf
ELEFLOW TECHNOLOGIES MRF427/MRF427A www.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 25 W (PEP), Minimum Gain = 18 dB
Otros transistores... MRF314A, MRF315A, MRF329, MRF392, MRF393, MRF410, MRF412, MRF427A, MPSA42, MRF448, MRF449A, MRF450A, MRF453A, MRF466, MRF477, MRF479, MRF486
