MRF429 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRF429
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 233 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 16 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: SOT121
MRF429 Transistor Equivalent Substitute - Cross-Reference Search
MRF429 Datasheet (PDF)
mrf429.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain
mrf429.pdf
ELEFLOW TECHNOLOGIES MRF429www.eleflow.com NPN Silicon RF power transistor MRF429 Description: MRF429 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M
mrf429re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF429/DThe RF LineNPN SiliconMRF429RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (LINEAR), 30 MHzMinimum Gain
mrf421rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo
mrf422.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod
mrf426re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR
mrf426.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF426/DThe RF LineNPN SiliconMRF426RF Power Transistor. . . designed for high gain driver and output linear amplifier stages in 1.5 to30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP)25 W (PEP), 30 MHzMinimum Gain = 22 dBRF POWEREfficiency = 35%TRANSISTOR
mrf421re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo
mrf422re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF422/DThe RF LineNPN SiliconMRF422RF Power TransistorDesigned primarily for applications as a highpower linear amplifier from 2.0to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP)150 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermod
mrf421.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF421/DThe RF LineNPN SiliconMRF421RF Power TransistorDesigned primarily for application as a highpower linear amplifier from 2.0 to30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP)100 W (PEP), 30 MHzMinimum Gain = 10 dBRF POWEREfficiency = 40%TRANSISTORS Intermo
mrf422.pdf
MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a highpower linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)
mrf426.pdf
MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2
mrf427a.pdf
ELEFLOW TECHNOLOGIES MRF427/MRF427Awww.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description: MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 25 W (PEP), Minimum Gain = 18 dB
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
