MRF448 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF448
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 290 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: SOT121
- Selección de transistores por parámetros
MRF448 Datasheet (PDF)
mrf448.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER
mrf448.pdf

MRF448 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 250W, 30MHz, 50V Designed primarily for highvoltage applications as a highpower Product Image linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45
mrf448.pdf

ELEFLOW TECHNOLOGIES MRF448www.eleflow.com NPN Silicon RF power transistor MRF448 Description: MRF448 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 250 W, Minimum Gain = 1, Efficiency = 45% Maximum Rat
mrf448re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BFY77 | BD138-6 | MMBTA92-L | NPS6076 | 3N103 | 2SC3954 | 2SC3670A
History: BFY77 | BD138-6 | MMBTA92-L | NPS6076 | 3N103 | 2SC3954 | 2SC3670A



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