MRF448 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF448 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 290 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 350 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: SOT121
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MRF448 datasheet
mrf448.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF448/D The RF Line NPN Silicon MRF448 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W 250 W, 30 MHz Minimum Gain = 12 dB RF POWER
mrf448.pdf
MRF448 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 250W, 30MHz, 50V Designed primarily for high voltage applications as a high power Product Image linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45
mrf448.pdf
ELEFLOW TECHNOLOGIES MRF448 www.eleflow.com NPN Silicon RF power transistor MRF448 Description MRF448 is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W, Minimum Gain = 1, Efficiency = 45% Maximum Rat
mrf448re.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF448/D The RF Line NPN Silicon MRF448 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 250 W 250 W, 30 MHz Minimum Gain = 12 dB RF POWER
Otros transistores... MRF315A, MRF329, MRF392, MRF393, MRF410, MRF412, MRF427A, MRF429, 2SC828, MRF449A, MRF450A, MRF453A, MRF466, MRF477, MRF479, MRF486, MRF492
History: D11C3F1 | BTD2150FP
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