MRF839F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRF839F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 16 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 960 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: KT56
Búsqueda de reemplazo de transistor bipolar MRF839F
MRF839F Datasheet (PDF)
mrf839f.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa
mrf839fr.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF839F/DThe RF LineNPN SiliconMRF839FRF Power Transistors. . . designed for 12.5 Volt UHF largesignal, commonemitter amplifierapplications in industrial and commercial FM equipment operating in the rangeof 806960 MHz. Specified 12.5 V, 870 MHz Characteristics3.0 W, 806960 MHzOutput Power = 3.0 Wa
mrf8372r1 mrf8372r2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS
mrf837.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)
mrf837re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF837/DThe RF LineNPN SiliconMRF837RF Low Power TransistorMRF8372, R1, R2Designed primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)
mrf8372rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF8372/DThe RF LineNPN SiliconMRF8372R1, R2RF Low Power TransistorDesigned primarily for wideband large signal predriver stages in 800 MHzand UHF frequency ranges. Specified @ 12.5 V, 870 MHz CharacteristicsOutput Power = 750 mW750 mW, 870 MHzMinimum Gain = 8.0 dBRF LOW POWEREfficiency 60% (Typ)TRANSIS
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2460 | 2N2528
Liste
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