MRF839F - Даташиты. Аналоги. Основные параметры

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF839F/D The RF Line NPN Silicon MRF839F RF Power Transistors . . . designed for 12.5 Volt UHF large signal, common emitter amplifier applications in industrial and commercial FM equipment operating in the range of 806 960 MHz. Specified 12.5 V, 870 MHz Characteristics 3.0 W, 806 960 MHz Output Power = 3.0 Wa

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF839F/D The RF Line NPN Silicon MRF839F RF Power Transistors . . . designed for 12.5 Volt UHF large signal, common emitter amplifier applications in industrial and commercial FM equipment operating in the range of 806 960 MHz. Specified 12.5 V, 870 MHz Characteristics 3.0 W, 806 960 MHz Output Power = 3.0 Wa

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF837/D The RF Line NPN Silicon MRF837 RF Low Power Transistor MRF8372, R1, R2 Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF8372/D The RF Line NPN Silicon MRF8372R1, R2 RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW 750 mW, 870 MHz Minimum Gain = 8.0 dB RF LOW POWER Efficiency 60% (Typ) TRANSIS